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參數(shù)資料
| 型號： | TN0606 |
| 廠商： | Supertex, Inc. |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管垂直的DMOS |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 31K |
| 代理商： | TN0606 |
7-51
7
BV
DSS
/ R
DS(ON)
BV
DGS
60V
I
D(ON)
(min)
V
GS(th)
(max)
(max)
TO-92
TO-220
1.5
1.5
3.0A
2.0V
TN0606N3
TN0606N5
100V
3.0A
2.0V
TN0610N3
—
MIL visual screening available
TN0606
TN0610
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Order Number / Package
Note:
1.
See Package Outline section for dimensions
Package Options
Features
I
I
Low threshold — 2.0V max.
I
I
High input impedance
I
I
Low input capacitance — 100pF typical
I
I
Fast switching speeds
I
I
Low on resistance
I
I
Free from secondary breakdown
I
I
Low input and output leakage
I
I
Complementary N- and P-channel devices
Applications
I
I
Logic level interfaces – ideal for TTL and CMOS
I
I
Solid state relays
I
I
Battery operated systems
I
I
Photo voltaic drives
I
I
Analog switches
I
I
General purpose line drivers
I
I
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
TO-220
TAB: DRAIN
G
TO-92
S G D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TN0606N3 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN0606N5 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN0610N3 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN0610 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight |
| TN0620 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓200V，低門限1.6V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN06060A(DC) | 制造商:Defender Security 功能描述:6-60mm DC Auto Iris Varifocal Lens |
| TN06060V | 制造商:Defender Security 功能描述:6-60mm Manual Iris Varifocal Lens |
| TN0606N3 | 功能描述:MOSFET 60V 1.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0606N3-G | 功能描述:MOSFET 60V 1.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0606N3-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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