欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: TN2106K1
廠商: SUPERTEX INC
元件分類: 功率晶體管
英文描述: N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述: 280 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: SAME AS SOT-23, 3 PIN
文件頁數: 1/4頁
文件大小: 32K
代理商: TN2106K1
7-71
TN2106
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
Package Options
BV
DSS
/
BV
DGS
60V
R
DS(ON)
(max)
V
GS(th)
(max)
TO-236AB*
TO-92
Die
2.5
2.0V
TN2106K1
TN2106N3
TN2106ND
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Order Number / Package
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Product marking for SOT-23:
N1L
F
where
F
= 2-week alpha date code
TO-236AB
(SOT-23)
top view
Gate
Source
Drain
S G D
TO-92
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
相關PDF資料
PDF描述
TN2106N3 N-Channel Enhancement-Mode Vertical DMOS FETs
TN2106ND N-Channel Enhancement-Mode Vertical DMOS FETs
TN2124 N-Channel Enhancement-Mode Vertical DMOS FETs
TN2124K1 N-Channel Enhancement-Mode Vertical DMOS FETs
TN2124N8 N-Channel Enhancement-Mode Vertical DMOS FETs
相關代理商/技術參數
參數描述
TN2106K1-G 功能描述:MOSFET 60V 2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN2106N3 功能描述:MOSFET 60V 2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN2106N3-G 功能描述:MOSFET 60V 2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN2106N3-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
TN2106N3-G P003 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
主站蜘蛛池模板: 岐山县| 灌南县| 通许县| 独山县| 武宁县| 壤塘县| 积石山| 商水县| 攀枝花市| 五大连池市| 开化县| 古交市| 沙湾县| 丹江口市| 永修县| 刚察县| 康定县| 乐亭县| 忻城县| 鄂尔多斯市| 彰化县| 商河县| 鲁甸县| 饶河县| 丰都县| 共和县| 商南县| 正宁县| 满城县| 汽车| 南汇区| 明光市| 阿合奇县| 舟山市| 大厂| 马龙县| 广丰县| 泰顺县| 上高县| 微博| 彭山县|