- 您現在的位置：買賣IC網 > PDF目錄385003 > TN2130 (ELAN Microelctronics Corp .) N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓300V，低門限2.4V，N溝道增強型垂直DMOS結構場效應管) PDF資料下載
參數資料
| 型號： | TN2130 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓300V，低門限2.4V，N溝道增強型垂直DMOS結構場效應管) |
| 中文描述： | N溝道增強型場效應管垂直的DMOS（擊穿電壓300V，低門限為2.4V，?溝道增強型垂直的DMOS結構場效應管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 30K |
| 代理商： | TN2130 |
7-79
TN2130
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
BV
DSS
/
BV
DGS
300V
R
DS(ON)
(max)
V
GS(th)
(max)
TO-236AB*
25
2.4V
TN2130K1
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Order Number / Package
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Product marking for SOT-23:
N1T
F
where
F
= 2-week alpha date code
Gate
Source
Drain
TO-236AB
(SOT-23)
top view
Low Threshold
Ordering Information
相關PDF資料 |
PDF描述 |
|---|---|
| TN2404K | N-Channel 240 -V (D-S) MOSFET |
| TN2404K-T1 | N-Channel 240 -V (D-S) MOSFET |
| TN2404KL | N-Channel 240 -V (D-S) MOSFET |
| TN2404KL-TR1 | N-Channel 240 -V (D-S) MOSFET |
| TN2460L | N-Channel Enhancement-Mode MOSFET(最小漏源擊穿電壓240V，最小夾斷電流75mA的N溝道增強型MOSFET晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TN2130K1 | 功能描述:MOSFET 300V 25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2130K1-G | 功能描述:MOSFET 300V 25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2130ND | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN21-B.29 | 制造商:TEKO 功能描述:Bulk 制造商:TEKO 功能描述:ENCLOSURE TEKNET BLACK/GREY |
| TN21-B.29-AL | 制造商:OKW ENCLOSURES INC 功能描述:ENCLOSURE, ABS, BLACK/GRAY, 6.102 X 3.78 X .953 W/BATTERY |
發布緊急采購，3分鐘左右您將得到回復。