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參數(shù)資料
| 型號(hào)： | TN2501ND |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 18 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | DIE |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 476K |
| 代理商： | TN2501ND |
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
BV
DSS
/
BV
DGS
18V
R
DS(ON)
(max)
I
D(ON)
(min)
V
GS(th)
(max)
TO-243AA*
Die
2.5
250mA
1.0V
TN2501N8
TN2501ND
*
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available.
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Low threshold
High input impedance
Low input capacitance — 110pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
15V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*
Distance of 1.6 mm from case for 10 seconds.
Ordering Information
Package Option
Order Number /Package
Note: See Package Outline section for dimensions.
TN2501
TO-243AA
(SOT-89)
G
D
S
D
Product marking for TO-243AA:
Where
= 2-week alpha date code
TN5U
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TN2501 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2501N8 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2501 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓18V，低門限1.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| TN2504N8 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2504ND | N-Channel Enhancement-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN2504 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2504N8 | 功能描述:MOSFET 40V 1Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2504N8-G | 功能描述:MOSFET 40V 1Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2504ND | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2510 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
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