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參數資料
| 型號： | TN3467A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 1200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 162K |
| 代理商： | TN3467A |
T
TN3467A
PNP Switching Transistor
This device is designed for high speed saturated switching applications
at currents to 800 mA. Sourced from Process 70.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
40
40
5.0
1.2
V
V
V
A
°
C
-55 to +150
MMPQ3467
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
TN3467A
1.0
8.0
50
125
MMPQ3467
1.0
8.0
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
W
mW/
°
C
°
C/W
°
C/W
°
C/W
°
C/W
R
θ
JC
R
θ
JA
Effective 4 Die
Each Die
125
240
TO-226
CBE
C
CCCCCCC
SOIC-16
E
BEBEBEB
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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