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參數資料
| 型號： | TO-220FP |
| 廠商： | Central Semiconductor Corp. |
| 英文描述： | 8&16 Amp Schottky Rectifiers |
| 中文描述： | 8 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 71K |
| 代理商： | TO-220FP |
HI-SINCERITY
MICROELECTRONICS CORP.
H06N60 Series
N-Channel Power Field Effect Transistor
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 1/6
H06N60U, H06N60E, H06N60F
HSMC Product Specification
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and V
DS(on)
Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
Parameter
Value
6
24
±
20
Units
A
A
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T
C
=25
o
C)
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
Derate above 25
O
C
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
Operating Temperature Range
Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25
O
C
(V
DD
=100V, V
GS
=10V, I
L
=6A, L=10mH, R
G
=25
)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
V
110
110
40
W
W
W
P
D
0.58
0.58
0.33
W/
°
C
W/
°
C
W/
o
C
T
j
T
stg
-55 to 150
-55 to 150
O
C
O
C
E
AS
250
mJ
T
L
260
°
C
Note: 1. V
=50V, I
=10A
2. Pulse Width and frequency is limited by T
j(max)
and thermal response
H06N60 Series Pin Assignment
1
2
3
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic
TO-263
Package Code: U
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
1
2
3
Tab
1
2
3
Tab
H06N60 Series
Symbol:
G
D
S
相關PDF資料 |
PDF描述 |
|---|---|
| TO-263-5 | CONNECTOR ACCESSORY |
| TO-220FP | N-Channel Power Field Effect Transistor |
| TO-263 | N-Channel Power Field Effect Transistor |
| TO-269AA | Case No. TO-269AA Device |
| TOF15-05S | CONNECTOR ACCESSORY |
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