- 您現在的位置：買賣IC網 > PDF目錄385007 > TP0205A (Vishay Intertechnology,Inc.) P-Channel 20-V MOSFET(漏源電壓-20V的P溝道增強型MOSFET) PDF資料下載
參數資料
| 型號： | TP0205A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 20-V MOSFET(漏源電壓-20V的P溝道增強型MOSFET) |
| 中文描述： | P通道20 - V MOSFET的（漏源電壓- 20V的的P溝道增強型MOSFET的） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 43K |
| 代理商： | TP0205A |
TP0205A/AD
Vishay Siliconix
New Product
Document Number: 70869
S-58611—Rev. A, 19-Jul-99
www.siliconix.com FaxBack 408-970-5600
1
P-Channel 20-V MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(mA)
–20
3.8 @ V
GS
= –4.5 V
5.0 @ V
GS
= –2.5 V
–180
–100
High-Side Switching
Low On-Resistance: 2.6 (typ)
Low Threshold: 0.9 V (typ)
Fast Switching Speed: 35 ns
2.5-V or Lower Operation
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Drivers: Relays, Solenoids, Lamps,
Hammers, Display, Memories
Battery Operated Systems
Load/Power Switching-Cell Phones,
PDA
SOT-363
SC-70 (6-Leads)
S
1
1
3
G
1
2
D
2
6
4
5
D
1
G
2
S
2
Order Number:
TP0205AD
SOT-323
SC-70 (3-Leads)
S
D
1
2
3
G
Order Number:
TP0205A
Parameter
Symbol
TP0205A
TP0205AD
Unit
Drain-Source Voltage
V
DS
–20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
–180
T
A
= 70 C
–140
mA
Pulsed Drain Current
I
DM
–500
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 70 C
P
D
0.15
0.20 (Total)
W
0.10
0.13 (Total)
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
TP0205A
TP0205AD
Unit
Maximum Junction-to-Ambient
a
R
thJA
833
625 (Total)
C/W
Notes
a.
Surface Mounted on FR4 Board, t
10 sec.
相關PDF資料 |
PDF描述 |
|---|---|
| TP0610KL | P-Channel 60-V (D-S) MOSFET |
| TP0610K | P-Channel 60-V (D-S) MOSFET |
| TP0610L | CONNECTOR ACCESSORY |
| TP0610T | CONNECTOR ACCESSORY |
| TP0610T | CONNECTOR ACCESSORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TP0205AD | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0205AD-T1 | 功能描述:MOSFET 20V 0.10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0205A-T1 | 功能描述:MOSFET RO 781-SI1303DL-E3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0206-100K | 制造商:MISCELLANEOUS 功能描述: |
| TP03 | 功能描述:繼電器插座與硬件 THERMAL PAD TRIPLE PHASE RoHS:否 制造商:TE Connectivity / Schrack 附件類型:Socket 相關繼電器系列:RP, RT, RY 端接類型:PCB 極數:1 |
發布緊急采購，3分鐘左右您將得到回復。