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參數資料
| 型號： | TP0620 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-200V，低門限2.4V，P溝道增強型垂直DMOS結構場效應管) |
| 中文描述： | P通道增強模式垂直的DMOS場效應管（擊穿電壓- 200V的電壓，低門限為2.4V，P溝道增強型垂直的DMOS結構場效應管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 27K |
| 代理商： | TP0620 |
7-123
7
BV
DSS
/
BV
DGS
-200V
R
DS(ON)
(max)
I
D(ON)
(min)
V
GS(th)
(max)
12
-0.75A
-2.4V
TP0620N3
MIL visual screening available
TO-92
Low Threshold
TP0620
Order Number / Package
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Note: See Package Outline section for dimensions.
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Features
I
I
Low threshold — -2.4 V max
I
I
High input impedance
I
I
Low input capacitance — 85pF typical
I
I
Fast switching speeds
I
I
Low on resistance
I
I
Free from secondary breakdown
I
I
Low input and output leakage
I
I
Complementary N- and P-channel devices
Applications
I
I
Logic level interfaces – ideal for TTL and CMOS
I
I
Solid state relays
I
I
Battery operated systems
I
I
Photo voltaic drives
I
I
Analog switches
I
I
General purpose line drivers
I
I
Telecom switches
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
TO-92
S G D
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TP0620N3 | 功能描述:MOSFET 200V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0620N3-G | 功能描述:MOSFET 200V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0620N3-G P002 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
| TP0620N3-G P003 | 制造商:Supertex Inc 功能描述:Trans MOSFET P-CH 200V 0.175A 3-Pin TO-92 T/R 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
| TP0620N3-G P005 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
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