- 您現在的位置：買賣IC網 > PDF目錄385007 > TP2535 (ELAN Microelctronics Corp .) P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-350V，低門限2.4V，P溝道增強型垂直DMOS結構場效應管) PDF資料下載
參數資料
| 型號： | TP2535 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-350V，低門限2.4V，P溝道增強型垂直DMOS結構場效應管) |
| 中文描述： | P通道增強模式垂直的DMOS場效應管（擊穿電壓- 350V，低門限為2.4V，P溝道增強型垂直的DMOS結構場效應管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 33K |
| 代理商： | TP2535 |
7-143
7
BV
DSS
/
BV
DGS
-350V
-400V
R
DS(ON)
(max)
V
GS(th)
(max)
I
D(ON)
(min)
TO-92
TO-243AA*
Die
25
25
-2.4V
-2.4V
-0.4A
-0.4A
TP2535N3
TP2540N3
—
—
TP2540N8
TP2540ND
*
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available.
Ordering Information
TP2535
TP2540
Low Threshold
Package Options
Features
Low threshold — -2.4V max.
High input impedance
Low input capacitance — 125pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Order Number / Package
P-Channel Enhancement-Mode
Vertical DMOS FETs
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Note: See Package Outline section for dimensions.
TO-243AA
(SOT-89)
G
D
S
D
S G D
TO-92
Product marking for TO-243AA
Where *=2-week alpha date code
TP5D*
相關PDF資料 |
PDF描述 |
|---|---|
| TP2540 | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-400V，低門限2.4V，P溝道增強型垂直DMOS結構場效應管) |
| TP2635 | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-350V，低門限2.0V，P溝道增強型垂直DMOS結構場效應管) |
| TP2640 | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-400V，低門限2.0V，P溝道增強型垂直DMOS結構場效應管) |
| TP3005 | CONNECTOR ACCESSORY |
| TP3006 | CONNECTOR ACCESSORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TP2535N3 | 功能描述:MOSFET 350V 25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP2535N3-G | 功能描述:MOSFET 350V 25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP2535N3-G P002 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
| TP2535N3-G P003 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
| TP2535N3-G P005 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
發布緊急采購，3分鐘左右您將得到回復。