
1
TP3024B
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
The TP3024B is a balanced transistor designed specifically for use in cellular
radio systems. This device permits the design of a Class AB push–pull, high
gain, broadband amplifier having a high degree of linearity without the need for
complicated biasing circuitry.
Specified 26 Volts, 960 MHz Characteristics:
Output Power = 35.5 W
Minimum Gain = 7.5 dB
IQtotal = 150 mA
Push–Pull Configuration
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Emitter–Base Voltage
VEBO
TJ
Tstg
4.0
Vdc
Operating Junction Temperature
200
°
C
Storage Temperature Range
–65 to +200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
(TC = 75
°
C)
R
θ
JC
3.0
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, RBE = 75 Ohms)
Collector–Emitter Leakage
(VCE = 26 V, RBE = 75 Ohms)
Emitter–Base Breakdown Voltage
(IC = 5.0 mAdc, IC = 0)
Emitter–Base Leakage
(VBE = 2.5 V)
ON CHARACTERISTICS
(2)
DC Current Gain
(IC = 500 mA, VCE = 10 V)
DYNAMIC CHARACTERISTICS
(1)
Output Capacitance
(VCB = 24 V, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
(3)
Common–Emitter Amplifier Power Gain
(VCE = 26 V, Pout = 35.5 W, f = 960 MHz, IQtotal = 150 mA)
Collector Efficiency
(VCE = 26 V, Pout = 35.5 W, f = 960 MHz, IQtotal = 150 mA)
Symbol
Min
Typ
Max
Unit
V(BR)CER
40
—
—
Vdc
ICER
—
—
5.0
mA
V(BR)EBO
3.5
—
—
Vdc
IEBO
—
—
1.0
mA
hFE
15
—
100
—
Cob
—
17
25
pF
GPE
7.5
—
—
dB
η
c
45
—
—
%
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
2. Each transistor chip measured separately.
3. Both transistor chips operating in push–pull amplifier.
Order this document
by TP3024B/D
SEMICONDUCTOR TECHNICAL DATA
35.5 W, 960 MHz
UHF LINEAR POWER
TRANSISTOR
CASE 395B–01, STYLE 1