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參數資料
| 型號： | TP5322 |
| 廠商： | Supertex, Inc. |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FET |
| 中文描述： | P通道增強模式垂直的DMOS場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 304K |
| 代理商： | TP5322 |
TP5322
Rev. 3 September 14, 2004
1
Initial Release
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
!
Low threshold, -2.4V max.
!
High input impedance
!
Low input capacitance, 110pFmax.
!
Fast switching speeds
!
Low on resistance
!
Free from secondary breakdown
!
Low input and output leakage
!
Complementary N- and P-channel devices
Application
!
Logic level interfaces-ideal for TTL and CMOS
!
Battery operated systems
!
Photo voltaic devices
!
Analog switches
!
General purpose line drivers
!
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature****
****Distance of 1.6mm from case for 10 seconds.
BV
DSS
BV
DGS
±20V
-55°C to +150°C
300°C
General Description
These
low
threshold
transistors utilize an advanced vertical DMOS structure and
Supertex's well-proven silicon-gate manufacturing process. This
combination produces devices with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent in MOS
devices. Characteristic of all MOS structures, these devices are
free from thermal runaway and thermally-induced secondary
breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very low
threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds are
desired.
Package Options
Product Marking for SOT-89
enhancement-mode
(normally-off)
Ordering Information
Order Number / Package
TO-243AA**
TP5322N8
TP5322N8-G*
**Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
***Same as SOT-23. Products supplied on 3000 piece carrier tape reels.
TO-236AB***
TP5322K1
TP5322K1-G*
BV
DSS
/
BV
DGS
R
DS(ON)
(max)
V
GS(th)
(max)
I
D(ON)
(min)
-220V
-220V
12
12
-2.4V
-2.4V
-0.7A
-0.7A
A042005
* "Green" Certified Package
D
S
D
G
D
S
G
TO-236AB
(SOT-23)*
TO-243AA
(SOT-89)*
TP3C
Where
=2-week alpha date code
Product Marking for SOT-23
P3C
Where
=2-week alpha date code
相關PDF資料 |
PDF描述 |
|---|---|
| TP5322K1 | P-Channel Enhancement-Mode Vertical DMOS FET |
| TP5322K1-G | P-Channel Enhancement-Mode Vertical DMOS FET |
| TP5322N8 | P-Channel Enhancement-Mode Vertical DMOS FET |
| TP5322N8-G | P-Channel Enhancement-Mode Vertical DMOS FET |
| TP5335K1-G | P-Channel Enhancement-Mode Vertical DMOS FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TP5322_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP5322K1 | 功能描述:MOSFET MOSFET PCh ENHANCE MODE -220V 12 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP5322K1-G | 功能描述:MOSFET 220V 12 Ohm 0.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP5322N8 | 功能描述:MOSFET MOSFET PCh ENHANCE MODE -220V 12 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP5322N8-G | 功能描述:MOSFET 220V 12 Ohm 0.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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