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參數資料
| 型號： | TPC6003 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
| 中文描述： | 東芝場效應晶體管硅?頻道馬鞍山型（U型MOSIII） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 157K |
| 代理商： | TPC6003 |
TPC6003
2002-01-15
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS
III
)
TPC6003
Notebook PC Applications
Portable Equipment Applications
Low drain-source ON resistance: R
DS (ON)
= 19 m
(typ.)
High forward transfer admittance: |Y
fs
| = 7 S (typ.)
Low leakage current: I
DSS
= 10 μA (max) (V
DS
= 30 V)
Enhancement-model: V
th
= 1.3 to 2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
20 k )
V
DGR
30
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
6
Drain current
Pulse
(Note 1)
I
DP
24
A
Drain power dissipation
(t 5 s)
(Note 2a)
P
D
2.2
W
Drain power dissipation
(t 5 s)
(Note 2b)
P
D
0.7
W
Single pulse avalanche energy (Note 3)
E
AS
5.8
mJ
Avalanche current
I
AR
3
A
Repetitive avalanche energy (Note 4)
E
AR
0.22
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t 5 s)
(Note 2a)
R
th (ch-a)
56.8
°C/W
Thermal resistance, channel to ambient
(t 5 s)
(Note 2b)
R
th (ch-a)
178.5
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
This transistor is an electrostatically sensitive device. Please handle it
with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
6
4
1
2
3
5
Marking
(Note 5)
S 2 D
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|---|---|
| TPC6005 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
| TPC6104 | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) |
| TPC6108 | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS4) |
| TPC8014 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TPC6003(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 6A, 30V, SOT23-6 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Ch 30V 6A Logic SOT23-6 |
| TPC6003(TE85L,F,M) | 功能描述:MOSFET MOSFET N-Ch 30V 6A Rdson=0.024Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPC6003(TE85LF) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 6A 30V SOT23-6 |
| TPC6003_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type (U-MOSIII) |
| TPC6004 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Notebook PC Applications Portable Equipment Applications |
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