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參數資料
| 型號： | TPC8204 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) |
| 文件頁數： | 1/7頁 |
| 文件大小： | 340K |
| 代理商： | TPC8204 |
TPC8204
2003-02-18
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U
MOSII)
TPC8204
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Small footprint due to small and thin package
Low drain
source ON resistance
High forward transfer admittance : |Y
fs
| =
1
8 S (typ.)
Low leakage current
: I
DSS
=
1
0 μA (max) (V
DS
= 20 V)
Enhancement
mode
: V
th
= 0.5~
1
.2 V (V
DS
=
1
0 V, I
D
= 200 μA)
Maximum Ratings
(Ta = 25°C)
: R
DS
(ON)
=
1
6 m
(typ.)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
20
V
Drain-gate voltage (R
GS
= 20k
Ω
)
V
DGR
20
V
Gate-source voltage
V
GSS
±12
V
D C
(Note 1)
I
D
6
Drain curren
Pulse
I
DP
24
A
Single-device
operation
(Note 3a)
P
D (1)
1.5
Drain power
dissipation
(t = 10(Note 2a) Single-device value
at dual operation
(Note 3b)
P
D(2)
1.1
W
Single-device
operation
(Note 3a)
P
D (1)
0.75
Drain power
dissipation
(t = 10(Note 2b) Single-device value
at dual operation
(Note 3b)
P
D (2)
0.45
W
Single pulse avalanche energy
(Note 4)
E
AS
46.8
mJ
Avalanche current
(Note 1)
I
AR
6
A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
E
AR
0.1
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
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