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參數資料
| 型號： | TPIC2601KTD |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | GT 3C 3#16S SKT RECP WALL RM |
| 中文描述： | 6通道共源功率DMOS陣列 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 186K |
| 代理商： | TPIC2601KTD |
TPIC2601
6-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS048A – NOVEMBER 1996 – REVISED JANUARY 1998
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Low r
DS(on)
. . . 0.25
Typ
High Output Voltage . . . 60 V
Pulsed Current . . . 10 A Per Channel
Avalanche Energy Capability . . . 105 mJ
Input Transient Protection . . . 2000 V
description
The TPIC2601 is a monolithic power DMOS array
that consists of six electrically isolated N-channel
enhancement-mode
configured with a common source and open
drains. Each transistor features integrated
high-current zener diodes to prevent gate
damage in the event that an overstress condition
occurs. These zener diodes also provide up to
2000 V of ESD protection when tested using the
human-body model.
DMOS
transistors
The TPIC2601 is offered in a 15-pin PowerFLEX
(KTC) package and is characterized for operation over the
case temperature range of –40
°
C to 125
°
C. A 15-pin PowerFLEX
(KTD) package s also available for TI Japan
only.
schematic
DRAIN1
GATE2
DRAIN2
SOURCE/GND
GATE1
GATE3
DRAIN3
GATE4
Q4
DRAIN4
GATE5
Q5
DRAIN5
GATE6
DRAIN6
Q1
Q2
Q3
Q6
1
3
5, 6
10, 11
13
15
14
8
2
4
7
9
12
NOTE A: For correct operation, no drain terminal may be taken below GND.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerFLEX is a trademark of Texas Intruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
1998, Texas Instruments Incorporated
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
DRAIN6
GATE6
DRAIN5
GATE5
DRAIN4
DRAIN4
GATE4
SOURCE/GND
GATE3
DRAIN3
DRAIN3
GATE2
DRAIN2
GATE1
DRAIN1
KTC or KTD PACKAGE
(TOP VIEW)
TI Japan only
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|---|---|
| TPIC2603 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:6-CHANNEL SERIAL INTERFACE LOW-SIDE DRIVER |
| TPIC2603DW | 功能描述:功率驅動器IC 6-Ch Ser Interface Lo-Side Dr RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPIC2603DW | 制造商:Texas Instruments 功能描述:IC MOSFET DRIVER LOW SIDE S 制造商:Texas Instruments 功能描述:IC, MOSFET DRIVER, LOW SIDE, SOIC-24; Device Type:Low Side; Module Configuration:Low Side; Peak Output Current:350mA; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Driver Case Style:SOIC; No. of Pins:24; Input Delay:5s ;RoHS Compliant: No |
| TPIC2603DWG4 | 功能描述:功率驅動器IC 6-Ch Ser Interface Lo-Side Dr RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPIC2603DWR | 功能描述:功率驅動器IC 6-Ch Ser Interface Lo-Side Dr RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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