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參數資料
| 型號： | TPS1100Y |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數： | 4/10頁 |
| 文件大?。?/td> | 155K |
| 代理商： | TPS1100Y |
TPS1100, TPS1100Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics at T
J
= 25
°
C (unless otherwise noted)
static
PARAMETER
TEST CONDITIONS
TPS1100
TYP
TPS1100Y
MIN
UNIT
MIN
MAX
TYP
MAX
VGS(th)
Gate-to-source
threshold voltage
VDS = VGS,
ID = –250
μ
A
–1
–1.25
–1.50
–1.25
V
VSD
Source-to-drain voltage
(diode-forward
voltage)
IS = –1 A,
VGS = 0 V
–0.9
–0.9
V
IGSS
Reverse gate current,
drain short circuited to
source
VDS = 0 V,
VGS = –12 V
±
100
nA
IDSS
Zero-gate-voltage drain
current
VDS=
VDS = –12 V,
VGS= 0 V
VGS = 0 V
TJ = 25
°
C
TJ = 125
°
C
–0.5
μ
A
–10
VGS = –10 V
VGS = –4.5 V
VGS = –3 V
VGS = –2.7 V
ID = –1.5 A
ID = –0.5 A
180
180
rDS(on)
Static drain-to-source
on-state resistance
291
400
291
m
ID=
ID = –0.2 A
0 2 A
476
700
476
606
850
606
gfs
Forward
transconductance
VDS = –10 V,
ID = –2 A
2.5
2.5
S
Pulse test: pulse duration
≤
300
μ
s, duty cycle
≤
2%
dynamic
PARAMETER
TEST CONDITIONS
TPS1100, TPS1100Y
MIN
TYP
5.45
UNIT
MAX
Qg
Qgs
Qgd
td(on)
td(off)
tr
tf
trr(SD)
Total gate charge
Gate-to-source charge
VDS = –10 V,
VGS = –10 V,
ID = –1 A
0.87
nC
Gate-to-drain charge
1.4
Turn-on delay time
4.5
ns
Turn-off delay time
VDD = –10 V,
RG = 6
,
RL = 10
See Figures 1 and 2
ID = –1 A,
13
ns
Rise time
,
10
Fall time
Source-to-drain reverse recovery time
2
ns
IF = 5.3 A,
di/dt = 100 A/
μ
s
16
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|---|---|
| TPS1100YD | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
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| TPS1101 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
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| TPS1101D | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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