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參數資料
| 型號： | TPS1120YD |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數： | 6/12頁 |
| 文件大小： | 180K |
| 代理商： | TPS1120YD |
TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS080A – MARCH 1994 – REVISED AUGUST 1995
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
Drain current
vs Drain-to-source voltage
3
Drain current
vs Gate-to-source voltage
4
Static drain-to-source on-state resistance
vs Drain current
5
Capacitance
vs Drain-to-source voltage
6
Static drain-to-source on-state resistance (normalized)
vs Junction temperature
7
Source-to-drain diode current
vs Source-to-drain voltage
8
Static drain-to-source on-state resistance
vs Gate-to-source voltage
9
Gate-to-source threshold voltage
vs Junction temperature
10
Gate-to-source voltage
vs Gate charge
11
– 5
– 4
– 2
– 1
0
– 3
0
– 1
– 2
VDS – Drain-to-Source Voltage – V
Figure 3
– 3
– 4
– 5
– 6
–
I
– 7
– 6
DRAIN CURRENT
vs
DRAIN-TO-SOURCE VOLTAGE
– 7
– 8
– 9 – 10
VGS = –6 V
áá
áá
VGS = –8 V
VGS = –7 V
VGS = –3 V
VGS = –4 V
VGS = –2 V
VGS = –5 V
TJ = 25
°
C
Figure 4
0
– 2
– 3
– 5
DRAIN CURRENT
vs
GATE-TO-SOURCE VOLTAGE
– 7
– 1
– 4
– 6
I
áá
áá
VGS – Gate-to-Source Voltage – V
TJ = 150
°
C
TJ = 25
°
C
TJ = –40
°
C
VDS = –10 V
0
– 5
– 4
– 2
– 1
– 3
– 7
– 6
All characteristics data applies for each independent MOSFET incorporated on the TPS1120.
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