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參數資料
| 型號： | TPS2013PW |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | POWER-DISTRIBUTION |
| 中文描述： | 配電 |
| 文件頁數： | 5/17頁 |
| 文件大小： | 366K |
| 代理商： | TPS2013PW |
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
recommended operating conditions
MIN
MAX
UNIT
Input voltage, VI(IN)
Input voltage, VI at EN
2.7
5.5
V
0
5.5
V
TPS2010
0
0.2
Continuous output current IO
Continuous output current, IO
TPS2011
0
0.6
A
TPS2012
TPS2013
0
0
1
1.5
Operating virtual junction temperature, TJ
–40
125
°
C
electrical characteristics over recommended operating junction temperature range, V
I(IN)
= 5.5 V,
I
O
= rated current, EN = 0 V (unless otherwise noted)
power switch
PARAMETER
TEST CONDITIONS
TPS2010, TPS2011
TPS2012, TPS2013
UNIT
MIN
TYP
75
MAX
VI(IN) = 5.5 V,
VI(IN) = 4.5 V,
VI(IN) = 3 V,
VI(IN) = 2.7 V,
TJ = 25
°
C
TJ = 25
°
C
TJ = 25
°
C
TJ = 25
°
C
TJ = 25
°
C
–40
°
C
≤
TJ
≤
125
°
C
TJ = 25
°
C,
TJ = 25
°
C,
TJ = 25
°
C,
TJ = 25
°
C,
95
On state resistance
On-state resistance
80
110
m
120
175
140
215
Output leakage current
EN
VI(IN)
0.001
1
μ
A
10
tr
Output rise time
VI(IN) = 5.5 V,
VI(IN) = 2.7 V,
VI(IN) = 5.5 V,
VI(IN) = 2.7 V,
CL = 1
μ
F
CL = 1
μ
F
CL = 1
μ
F
CL = 1
μ
F
4
ms
3.8
tf
Output fall time
3.9
3.5
ms
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
enable input (EN)
PARAMETER
TEST CONDITIONS
TPS2010, TPS2011
TPS2012, TPS2013
UNIT
MIN
TYP
MAX
High-level input voltage
2.7 V
≤
VI(IN)
≤
5.5 V
4.5 V
≤
VI(IN)
≤
5.5 V
2.7 V
≤
VI(IN) < 4.5 V
EN = 0 V or EN = VI(IN)
CL = 1
μ
F
CL = 1
μ
F
2
V
Low level input voltage
Low-level input voltage
0.8
V
0.4
Input current
–0.5
0.5
μ
A
tPLH
tPHL
Propagation (delay) time, low-to-high-level output
Propagation (delay) time, high-to-low-level output
20
40
ms
current limit
PARAMETER
TEST CONDITIONS
TPS2010, TPS2011
TPS2012, TPS2013
MIN
TYP
0.22
UNIT
MAX
0.6
TJ= 25
TJ = 25 C,
VI(IN) = 5.5 V,
OUT connected to GND, device
enabled into short circuit
TPS2010
0.4
Short circuit current
Short-circuit current
TPS2011
0.66
1.2
1.8
A
TPS2012
TPS2013
1.1
1.65
2
3
2.6
4.5
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
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