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11
GATE1
GATE2
DGND
TIMER
VREG
VSENSE2
VSENSE1
AGND
ISENSE2
ISENSE1
DISCH1
DISCH2
ENABLE
PWRGD1
FAULT
ISET1
ISET2
PWRGD2
IN2
IN1
PW PACKAGE
(TOP VIEW)
typical application
NOTE: Terminal 18 is active high on TPS2311.
VREG
IN1
ISET1
ISENSE1 GATE1
DISCH1
VSENSE1
PWRGD1
TIMER
VSENSE2
DISCH2
GATE2
ISENSE2
ISET2
IN2
DGND
AGND
V2
V1
3 V 5.5 V
3 V 13 V
PWRGD2
TPS2310
+
VO1
VO2
ENABLE
FAULT
+
SLVS275G – FEBRUARY 2000 – REVISED NOVEMBER 2006
DUAL HOT-SWAP POWER CONTROLLERS WITH INTERDEPENDENT
CIRCUIT BREAKER AND POWER-GOOD REPORTING
Dual-Channel High-Side MOSFET Drivers
IN1: 3 V to 13 V; IN2: 3 V to 5.5 V
Output dV/dt Control Limits Inrush Current
Circuit-Breaker With Programmable
Overcurrent Threshold and Transient Timer
Power-Good Reporting With Transient Filter
CMOS- and TTL-Compatible Enable Input
Low, 5-A Standby Supply Current .(Max)
Available in 20-Pin TSSOP Package
–40°C to 85°C Ambient Temperature Range
Electrostatic Discharge Protection
Hot-Swap/Plug/Dock Power Management
Hot-Plug PCI, Device Bay
Electronic Circuit Breaker
The
TPS2310
and
TPS2311
are
dual-channel
hot-swap controllers that use external N-channel
MOSFETs
as
high-side
switches
in
power
applications. Features of these devices, such as
overcurrent protection (OCP), inrush current control,
output-power status reporting, and the ability to
discriminate between load transients and faults, are
critical requirements for hot-swap applications.
The TPS2310/11 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure
the device is off at start-up and confirm the status of the output voltage rails during operation. Each internal
charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the
N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs,
reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense
overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak
currents during power-state transitions, to disregard transients for a programmable period.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright 2000–2006, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.