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參數資料
| 型號： | TPS2301PWR |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁數： | 13/20頁 |
| 文件大小： | 411K |
| 代理商： | TPS2301PWR |
TPS2330, TPS2331
SINGLE HOT SWAP POWER CONTROLLER WITH
CIRCUIT BREAKER AND POWER-GOOD REPORTING
SLVS277A – MARCH 2000– REVISED APRIL 2000
13
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
typical application diagram
This diagram shows a typical dual hot-swap application. The pullup resistors at PWRGD and Fault should be
relatively large (e.g. 100 k
) to reduce power loss unless they are required to drive a large load.
VREG
0.1
μ
F
IN
ISET
RISET
ISENSE
RSENSE
GATE DISCH
VSENSE
RVSENSE_TOP
RVSENSE_BOTTOM
+
FAULT
PWRGD
FAULT
PWRGD
TIMER
ENABLE
DGND
AGND
VO
ENABLE
1
μ
F
～
10
μ
F
3 V
～
13 V IN
TPS2331
System
Board
Figure 18. Typical Hot-Swap Application
input capacitor
A 0.1-
μ
F ceramic capacitor in parallel with a 1-
μ
F ceramic capacitor should be placed on the input power
terminals near the connector on the hot-plug board to help stabilize the voltage rails on the cards. The
TPS2330/31 does not need to be mounted near the connector or these input capacitors. For applications with
more severe power environments, a 2.2-
μ
F or higher ceramic capacitor is recommended near the input
terminals of the hot-plug board. A bypass capacitor for IN should be placed close to the device.
output capacitor
A 0.1-
μ
F ceramic capacitor is recommended per load on the TPS2330/31; these capacitors should be placed
close to the external FETs and to TPS2330/31. A larger bulk capacitor on the load is also recommended. The
value of the bulk capacitor should be selected based on the power requirements and the transients generated
by the application.
external FET
To deliver power from the input sources to the loads, the controller needs an external N-channel MOSFET. A
few widely used MOSFETs are shown in Table 1. But many other MOSFETs on the market can also be used
with TPS23xx in hot-swap systems.
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