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參數資料
| 型號： | TPS2557DRB |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 |
| 封裝： | PLASTIC, SON-8 |
| 文件頁數： | 5/22頁 |
| 文件大?。?/td> | 942K |
| 代理商： | TPS2557DRB |
www.ti.com
SLVS931 – NOVEMBER 2009
Table 1. Common RILIM Resistor Selections (continued)
1500
73.6
73.2
72.5
73.9
1276
1508
1715
1750
63.1
63.4
62.8
64.0
1489
1742
1965
2000
55.2
54.9
54.4
55.4
1737
2012
2252
2250
49.1
48.7
48.2
49.2
1975
2269
2523
2500
44.2
43.8
44.6
2191
2501
2765
2750
40.2
39.8
40.6
2425
2750
3025
3000
36.9
36.5
36.1
36.9
2689
3030
3315
3250
34.0
33.7
34.3
2901
3253
3545
3500
31.6
31.3
31.9
3138
3501
3800
3750
29.5
29.4
29.1
29.7
3390
3764
4068
4000
27.7
27.4
27.1
27.7
3656
4039
4349
4250
26.0
26.1
25.8
26.4
3851
4241
4554
4500
24.6
24.9
24.7
25.1
4050
4446
4761
4750
23.3
23.2
23.0
23.4
4369
4773
5091
5000
22.1
21.9
22.3
4602
5011
5331
5250
21.1
21.0
20.8
21.2
4861
5274
5595
5500
20.1
20.0
19.8
20.2
5121
5539
5859
POWER DISSIPATION AND JUNCTION TEMPERATURE
The low on-resistance of the N-channel MOSFET allows small surface-mount packages to pass large currents. It
is good design practice to estimate power dissipation and junction temperature. The below analysis gives an
approximation for calculating junction temperature based on the power dissipation in the package. However, it is
important to note that thermal analysis is strongly dependent on additional system level factors. Such factors
include air flow, board layout, copper thickness and surface area, and proximity to other devices dissipating
power. Good thermal design practice must include all system level factors in addition to individual component
analysis.
Begin by determining the rDS(on) of the N-channel MOSFET relative to the input voltage and operating
temperature. As an initial estimate, use the highest operating ambient temperature of interest and read rDS(on)
from the typical characteristics graph. Using this value, the power dissipation can be calculated by:
PD = rDS(on) × IOUT
2
Where:
PD = Total power dissipation (W)
rDS(on) = Power switch on-resistance ()
IOUT = Maximum current-limit threshold (A)
This step calculates the total power dissipation of the N-channel MOSFET.
Finally, calculate the junction temperature:
TJ = PD × θJA + TA
Where:
TA = Ambient temperature (°C)
θJA = Thermal resistance (°C/W)
PD = Total power dissipation (W)
Compare the calculated junction temperature with the initial estimate. If they are not within a few degrees, repeat
the calculation using the "refined" rDS(on) from the previous calculation as the new estimate. Two or three
iterations are generally sufficient to achieve the desired result. The final junction temperature is highly dependent
on thermal resistance
θJA, and thermal resistance is highly dependent on the individual package and board
layout. The Dissipating Rating Table provides examples of thermal resistance for specific packages and board
layouts.
Copyright 2009, Texas Instruments Incorporated
13
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| TPS2559DRCR | 功能描述:IC PWR DIST SWITCH ADJ 10VSON 制造商:texas instruments 系列:- 包裝:剪切帶（CT） 零件狀態:有效 開關類型:通用 輸出數:1 比率 - 輸入:輸出:1:1 輸出配置:高端 輸出類型:N 通道 接口:開/關 電壓 - 負載:2.5 V ~ 6.5 V 電壓 - 電源（Vcc/Vdd）:不需要 電流 - 輸出（最大值）:5.5A 導通電阻（典型值）:13 毫歐 輸入類型:非反相 特性:壓擺率受控型，狀態標志 故障保護:限流（可調），超溫，UVLO 工作溫度:-40°C ~ 125°C （TJ） 封裝/外殼:10-VFDFN 裸露焊盤 供應商器件封裝:10-VSON（3x3） 標準包裝:1 |
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