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參數資料
| 型號： | TPS2818-Q1 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVERS |
| 中文描述： | 單通道高速MOSFET驅動器 |
| 文件頁數： | 13/21頁 |
| 文件大小： | 403K |
| 代理商： | TPS2818-Q1 |
SPRS289A AUGUST 2005 REVISED OCTOBER 2005
13
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
MOSFETs are voltage-driven devices that require very little steady-state drive current. However, the large input
capacitance (200 pF to 3000 pF or greater) of these devices requires large current surges to reduce the turn-on and
turn-off times. The TPS2816 series of high-speed drivers can supply up to 2 A to a MOSFET, greatly reducing the
switching times. The fast rise times and fall times and short propagation delays allow for operation in today’s
high-frequency switching converters.
In addition, MOSFETs have a limited gate-bias voltage range, usually less than 20 V. The TPS2816 series of drivers
extends this operating range by incorporating an on-board series regulator with an input range up to 40 V. This regulator
can be used to power the drivers, the PWM chip, and other circuitry, providing the power dissipation rating is not
exceeded.
When using these devices, care should be exercised in the proper placement of the driver, the switching MOSFET,
and the bypass capacitor. Because of the large input capacitance of the MOSFET, the driver should be placed close
to the gate to eliminate the possibility of oscillations caused by trace inductance ringing with the gate capacitance
of the MOSFET. When the driver output path is longer than approximately 2 in, a resistor in the range of 10
should
be placed in series with the gate drive as close as possible to the MOSFET. A ceramic bypass capacitor also is
recommended to provide a source for the high-speed current transients that the MOSFET requires. This capacitor
should be placed between V
CC
and GND of the driver (see Figures 20 and 21).
Regulator
0.1
μ
F
1
2
3
5
4
Input
TPS2816
VCC
Load
Figure 20. V
CC
< 14 V
Regulator
4.7
μ
F
1
2
3
5
4
Input
TPS2816
VDD
Load
0.1
μ
F
+
Figure 21. V
CC
> 14 V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TPS2819DBVR | 功能描述:功率驅動器IC 2A HS Non-Invert RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS2819DBVRG4 | 功能描述:功率驅動器IC Non-inverting H-S MOSFET Driver RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS2819DBVT | 功能描述:功率驅動器IC Non-inverting H-S MOSFET Driver RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS2819DBVTG4 | 功能描述:功率驅動器IC Non-inverting H-S MOSFET Driver RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS2819MDBVREP | 功能描述:功率驅動器IC EP Sgl High-Speed Mosfet Drivers RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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