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參數資料
| 型號： | TPS3610T50PWG4 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 電源管理 |
| 英文描述： | 2-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO14 |
| 封裝： | 5.10 X 6.60 MM, GREEN, PLASTIC, TSSOP-14 |
| 文件頁數： | 7/26頁 |
| 文件大小： | 711K |
| 代理商： | TPS3610T50PWG4 |
TPS3610U18, TPS3610T50
BATTERY BACKUP SUPERVISORS FOR RAM RETENTION
SLVS327B – DECEMBER 2000 – REVISED DECEMBER 2002
15
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 6
500
600
700
800
900
1000
50
75
100
125
150
175
200
TA = 85°C
TA = 25°C
TA = 0°C
TA = –40°C
–
Static
Drain-Source
On-State
Resistance
–
m
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
(VDD to VOUT)
vs
OUTPUT CURRENT
VDD = 3.3 V
VBAT = GND
MSWITCH = GND
IO – Output Current – mA
r DS(on)
Figure 7
5
7.5
10
12.5
15
17.5
20
2.5
4.5
6.5
8.5
10.5
12.5
14.5
TA = 85°C
TA = 25°C
TA = 0°C
TA = –40°C
–
Static
Drain-Source
On-State
Resistance
–
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
(VBAT to VOUT)
vs
OUTPUT CURRENT
IO – Output Current – mA
r DS(on)
VBAT = 3.3 V
MSWITCH = GND
Figure 8
0
5
10
15
20
25
30
35
40
01
2
3
4
5
TA = 85°C
TA = 25°C
TA = 0°C
TA = –40°C
ICEOUT = 5 mA
VDD = 5 V
MSWITCH = GND
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
(CEIN to CEOUT)
vs
INPUT VOLTAGE AT CEIN
VI(CEIN) – Input Voltage at CEIN – V
–
Static
Drain
Source
On-State
Resistance
r DS(on)
(CEIN
to
CEOUT)
–
0
5
10
15
20
25
30
012
3
456
TA = –40°C
TA = 25°C
TA = 85°C
TA = 0°C
–
Supply
Current
–
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
I DD
A
VDD – Supply Voltage – V
VBAT Mode
VBAT = 2.6 V
MSWITCH = GND
VDD Mode
VBAT = GND
MSWITCH = GND
or
Figure 9
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TPS3610T50PWR | 功能描述:監控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監測電壓數: 監測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| TPS3610T50PWRG4 | 功能描述:監控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監測電壓數: 監測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| TPS3610U18 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:BATTERY-BACKUP SUPERVISORS FOR RAM RETENTION |
| TPS3610U18PW | 功能描述:監控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監測電壓數: 監測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| TPS3610U18PWG4 | 功能描述:監控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監測電壓數: 監測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
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