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參數資料
| 型號： | TPS54873PWPG4 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 穩壓器 |
| 英文描述： | 12 A SWITCHING REGULATOR, 762 kHz SWITCHING FREQ-MAX, PDSO28 |
| 封裝： | GREEN, PLASTIC, HTSSOP-28 |
| 文件頁數： | 17/22頁 |
| 文件大小： | 605K |
| 代理商： | TPS54873PWPG4 |
TPS54873
SLVS444A OCTOBER 2002 REVISED FEBRUARY 2005
www.ti.com
4
ELECTRICAL CHARACTERISTICS (continued)
TJ = 40°C to 125°C, VI = 3 V to 6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ERROR AMPLIFIER
Error amplifier open loop voltage gain
1 k COMP to AGND(1)
90
110
dB
Error amplifier unity gain bandwidth
Parallel 10 k, 160 pF COMP to AGND(1)
3
5
MHz
Error amplifier common mode input voltage range
Powered by internal LDO(1)
0
VBIAS
V
Input bias current, VSENSE
VSENSE = Vref
60
250
nA
Output voltage slew rate (symmetric), COMP
1.0
1.4
V/s
PWM COMPARATOR
PWM comparator propagation delay time,
PWM comparator input to PH pin (excluding
deadtime)
10-mV overdrive(1)
70
85
ns
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
0.82
1.20
1.40
V
Enable hysteresis voltage, SS/ENA
0.03
V
Falling edge deglitch, SS/ENA(1)
2.5
s
Internal slow-start time
2.6
3.35
4.1
ms
Charge current, SS/ENA
SS/ENA = 0 V
3
5
8
A
Discharge current, SS/ENA
SS/ENA = 1.3 V, VI = 1.5 V
2.0
2.3
4.0
mA
POWER GOOD
Power good threshold voltage
VSENSE falling
90
%Vref
Power good hysteresis voltage(1)
3
%Vref
Power good falling edge deglitch(1)
35
s
Output saturation voltage, PWRGD
I(sink) = 2.5 mA
0.18
0.3
V
Leakage current, PWRGD
VI = 5.5 V
1
A
CURRENT LIMIT
Current limit trip point
VI = 4.5 V Output shorted(1)
9
10
A
Current limit trip point
VI = 6 V Output shorted(1)
11
12
A
Current limit leading edge blanking time
100
ns
Current limit total response time
200
ns
THERMAL SHUTDOWN
Thermal shutdown trip point(1)
135
150
165
°C
Thermal shutdown hysteresis(1)
10
°C
OUTPUT POWER MOSFETS
r
Power MOSFET switches
VI = 6 V(4)
26
47
m
rDS(on)
Power MOSFET switches
VI = 4.5 V(4)
30
60
m
(1) Specified by design
(2) Static resistive loads only
(3) Specified by the circuit used in Figure 9
(4) Matched MOSFETs low-side rDS(on) production tested, high-side rDS(on) specified by design
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