- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98286 > TPS65562RGT (TEXAS INSTRUMENTS INC) BATTERY CHARGE CONTROLLER, PQCC16 PDF資料下載
參數(shù)資料
| 型號： | TPS65562RGT |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | BATTERY CHARGE CONTROLLER, PQCC16 |
| 封裝： | PLASTIC, QFN-16 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 534K |
| 代理商： | TPS65562RGT |
www.ti.com
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
SLVS775 – JUNE 2007
TA = 25°C, VBAT = 4.2 V, VCC = 3 V, IGBT_VCC = 3 V, V(SW) = 4.2 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RONL
ON resistance of XFULL
IXFULL = –1 mA
1.5
3
k
VPKH
(1)
Upper threshold voltage of I_PEAK
VCC = 3 V
2.4
V
VPKL
(1)
Lower threshold voltage of I_PEAK
VCC = 3 V
0.6
V
ICC1
Supply current from VBAT
CHG = H, VSW = 0 V (free run by tMAX)
17
50
μA
ICC2
Supply current from VCC
CHG = H, VSW = 0 V (free run by tMAX)
1.3
3
mA
ICC3
Supply current from VCC and VBAT
CHG = L
1
μA
ILKG1
Leakage current of SW terminal
2
μA
ILKG2
Leakage current of XFULL terminal
VXFULL = 5 V
1
μA
VI_PEAK = 3 V, CHG: High
2
Isink
Sink current at I_PEAK
μA
VI_PEAK = 3 V, CHG: Low
0.1
RONSW
SW ON resistance between SW and PGND
ISW = 1 A, VCC = 3 V
0.4
0.9
RIGBT1
G_IGBT pull up resistance
VG_IGBT = 0 V, IGBT_VCC = 3 V
8
12
19.4
RIGBT2
G_IGBT pull down resistance
VG_IGBT = 3 V, IGBT_VCC = 3 V
36
53
70
IPEAK1
Upper peak of ISW
VI_IPEAK = 3 V
1.58
1.68
1.78
A
IPEAK2
Lower peak of ISW
VI_IPEAK = 0 V
0.7
0.8
0.9
A
VBAT = 1.6 V, VCC = 3 V
28.0
28.7
29.4
V
VFULL
Charge completion detect voltage at V(SW)
VCC = 3 V
28.6
29.0
29.4
V
VZERO
Zero current detection at VSW
1
20
60
mV
TSD
(1)
Thermal shutdown temperature
150
160
170
°C
OVDS
Over current detection at VSW
0.95
1.2
1.45
V
TMIX
MAX OFF time
25
50
80
μs
TMAX
MAX ON time
50
100
160
μs
RINPD
Pull down resistance of CHG, F_ON
VCHG = VF_ON = 4.2 V
100
k
(1)
Specified by design
TA =25°C, VBAT = 4.2 V, VCC = 3 V, IGBT_VCC = 3 V, VSW =4.2 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
F_ON
↑↓ G_IGBT↑↓
50
ns
SW ON after VSW dips from VZERO
500
ns
SW OFF after ISW exceeds IPEAK
270
ns
tPD
(1)
Propagation delay
XFULL
↓ after VSW exceeds V
Full
400
ns
SW ON after CHG
↑
12
μs
SW OFF after CHG
↓
20
ns
(1)
Specified by design
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TPS65810RTQ | 9-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC56 |
| TPS65810RTQT | 9-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC56 |
| TPS65820RSHTG4 | 8-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC56 |
| TPS65910RSLT | POWER SUPPLY SUPPORT CKT, PQCC48 |
| TPS65920A2ZCHR | SPECIALTY CONSUMER CIRCUIT, PBGA139 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPS65562RGTR | 功能描述:功率驅(qū)動器IC Integr Photo Flash Charger & IGBT Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS65562RGTRG4 | 功能描述:功率驅(qū)動器IC Photo flash charger w/ IGBT driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS65562RGTT | 功能描述:功率驅(qū)動器IC Integr Photo Flash Charger & IGBT Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS65562RGTTG4 | 功能描述:功率驅(qū)動器IC Photo flash charger w/ IGBT driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS65563ARGTR | 功能描述:功率驅(qū)動器IC Integr Photo Flash Charger & IGBT Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。