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參數(shù)資料
| 型號(hào)： | TPV7025 |
| 廠(chǎng)商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | TPV7025 |
1
TPV7025
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal
matching of both input and output along with use of a push–pull package
configuration aids broadband amplifier designs.
Gold metallized dice with diffused emitter ballast resistors enhances
reliability, ruggedness and linearity.
Band IV & V (470–860 MHz)
25 W — Pref @ –45 dB IMD
25 V — VCC
Push–Pull Package
Gold Metallization for Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
TJ
Tstg
TC
28
Vdc
Collector–Base Voltage
45
Vdc
Emitter–Base Voltage
4.0
Vdc
Operating Junction Temperature
200
°
C
Storage Temperature Range
–50 to +200
°
C
Operating Case Temperature
70
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (TC = 70
°
C)
R
θ
JC
1.5
°
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
(IC = 120 mA, IB = 0)
V(BR)CEO
28
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 20 mA, IE = 0)
V(BR)CBO
45
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 6.0 mA, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
ON CHARACTERISTICS
(1)
DC Current Gain
(IC = 1.0 A, VCE = 20 V)
hFE
10
—
60
—
DYNAMIC CHARACTERISTICS
(1)
Output Capacitance
(VCB = 28 V, IE = 0, f = 1.0 MHz)
Cob
64
—
80
pF
NOTE:
(continued)
1. Each transistor chip measured separately.
Order this document
by TPV7025/D
SEMICONDUCTOR TECHNICAL DATA
25 W, 470–860 MHz
UHF LINEAR
POWER TRANSISTOR
CASE 398–03, STYLE 1
(BMA–4)
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