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參數資料
| 型號： | TRANSISTORS |
| 英文描述： | Letter Symbols - Transistors(12.15 k) |
| 中文描述： | 信符號-晶體管（12.15十一） |
| 文件頁數： | 2/3頁 |
| 文件大?。?/td> | 12K |
| 代理商： | TRANSISTORS |
1999 May 07
127
Philips Semiconductors
Letter Symbols - Transistors
General
Examples:
I
B2
continuous (DC) current flowing into the second
base terminal
continuous (DC) voltage between the terminals of
second base and emitter terminals.
V
B2-E
Subscripts for multiple devices
For multiple unit devices, the subscripts are modified by a
number preceding the letter subscript. In the case of
multiple subscripts, hyphens may be necessary to avoid
confusion.
Examples:
I
2C
continuous (DC) current flowing into the collector
terminal of the second unit
continuous (DC) voltage between the collector
terminals of the first and second units.
V
1C-2C
Application of the rules
Figure 1 represents a transistor collector current as a
function of time. It comprises a continuous (DC) current
and a varying component.
Letter symbols for electrical parameters
D
EFINITION
For the purpose of this publication, the term ‘electrical
parameter’ applies to four-pole matrix parameters,
elements of electrical equivalent circuits, electrical
Fig.1 Collector current as a function of time.
MBD537
current
0
(no IC
IC(RMS)
Ic(av)
ICM
ic
ic
Ic(rms)
Icm
IC(AV)
time
impedances and admittances, inductances and
capacitances.
B
ASIC LETTERS
The following list comprises the most important basic
letters used for electrical parameters of semiconductor
devices.
B, b
susceptance (imaginary part of an admittance)
C
capacitance
G, g
conductance (real part of an admittance)
H, h
hybrid parameter
L
inductance
R, r
resistance (real part of an impedance)
X, x
reactance (imaginary part of an impedance)
Y, y
admittance
Z, z
impedance.
Upper-case letters are used for the representation of:
Electrical parameters of external circuits and of circuits
in which the device forms only a part
All inductances and capacitances.
Lower-case letters are used for the representation of
electrical parameters inherent in the device, with the
exception of inductances and capacitances.
S
UBSCRIPTS
General subscripts
The following list comprises the most important general
subscripts used for electrical parameters of semiconductor
devices.
F, f
forward (forward transfer)
I, i (or 1)
input
L, l
load
O, o (or 2)
output
R, r
reverse (reverse transfer)
S, s
source.
Examples: Z
s
, h
f
, h
F
.
The upper-case variant of a subscript is used for the
designation of static (DC) values.
Examples:
h
FE
static value of forward current transfer ratio in
common-emitter configuration (DC current gain)
DC value of the external emitter resistance.
R
E
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