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參數資料
| 型號： | TS652 |
| 廠商： | 意法半導體 |
| 英文描述： | DIFFERENTIAL VARIABLE GAIN AMPLIFIER |
| 中文描述： | 差動可變增益放大器 |
| 文件頁數： | 5/9頁 |
| 文件大小： | 109K |
| 代理商： | TS652 |
TS652
5/9
BANDWIDTH
The small signal bandwidth is almost constant for gains between +18dB to 0dB and is in the order of
52MHz to 70MHz respectively. For 30dB gain the bandwidth is around 18MHz.
The power bandwidth is typically equal to 30MHz for 2V peak to peak signals.
MAXIMUM INPUT LEVEL
The input level must not exceed the following values :
negative peak value: must be greater than -V
CC
+ 1.5V
positive peak value: must be less than +V
CC
- 1.5V
For example, if a
±
6V power supply is used, the input signal can swing between -4.5V and +4.5V.
These values are due to common mode input range limitations of the input stage of the first amplifier.
Some other limitations may occur, due to the slew rate of the first operational amplifier (typically in the or-
der of 300V/
μ
s). This means that the maximum input signal decreases at high frequency.
SINGLE SUPPLY OPERATION
The incoming signal is AC coupled to the inputs.
The TS652 can be used either with a dual or a single supply. If a single supply is used, the inputs are bi-
ased to the mid supply voltage (+V
CC/2
). This bias network must be carefully designed, in order to reject
any noise present on the supply rail.
The AGND pin (9) must be connected to +V
CC/2
. The bias current of the second stage (inverting structure)
is 8
μ
A for both amplifiers. A resistor divider structure can be used. Two resistances should be chosen by
considering 8
μ
A as the 1% of the total current through these resistances. For a single +12V supply volt-
age, two resistances of 7.5k
can be used. The differential input consists of a high pass circuit, formed by
the 1
μ
F capacitor and a 1k
resistance and gives a break frequency of 160Hz.
SINGLE +12V SUPPLY OF THE TS652
+Vcc2
Input 1
Input 2
-Vcc
DGND
GC1
GC2
GC3
GC4
Output 1
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Output 2
AGND
Power Down
+Vcc1
G
L
10nF
1μF
7.5k
7.5k
12V
10nF
1μF
47k
47k
12V
1k
1k
IN+
IN-
10nF
100nF
10μF
12V
10nF
100nF
1μF
1μF
TS652
相關PDF資料 |
PDF描述 |
|---|---|
| TS652D | DIFFERENTIAL VARIABLE GAIN AMPLIFIER |
| TS652ID | DIFFERENTIAL VARIABLE GAIN AMPLIFIER |
| TS68000 | Microprocessor |
| TS68000CFN10 | 32-Bit Microprocessor |
| TS68000CFN12 | 32-Bit Microprocessor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TS652D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:DIFFERENTIAL VARIABLE GAIN AMPLIFIER |
| TS652ID | 功能描述:特殊用途放大器 Diff Variable Gain RoHS:否 制造商:Texas Instruments 通道數量:Single 共模抑制比（最小值）: 輸入補償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
| TS652IDT | 功能描述:特殊用途放大器 Diff Variable Gain RoHS:否 制造商:Texas Instruments 通道數量:Single 共模抑制比（最小值）: 輸入補償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
| TS65N-RA | 制造商:knitter-switch 功能描述: |
| TS6601H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Tact Switch Series (6x6mm) |
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