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參數資料
| 型號： | TS788 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N- channel Junction FET Electret Condenser Microphone |
| 中文描述： | N溝道場效應管結電容式麥克風 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 9K |
| 代理商： | TS788 |
971128TM2fXHD
Especially suited for use in electret condenser microphone.
TS788 is possible to make applied sets smaller and Slimmer.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Absolute Maximum Ratings / Ta=25
°
C
Gate to Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics / Ta=25
°
C
G-D Breakdown Voltage
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverce Transfer Capacitance
C
: The TS788 is classified by I
DSS
as follows : (unit :
μ
A)
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
TENTATIVE
Features
TS788
N- channel Junction FET
Electret Condenser Microphone
Package Dimensions
SMCP (unit : mm)
Test Circuit
Voltage Gain
Frequency Characteristics
Distortion
Reduced Voltage Characteristics
min typ max unit
V
GDO
I
G
I
D
P
D
Tj
Tstg
--20
10
1
100
150
--55to+150
V
mA
mA
mW
°
C
°
C
unit
V
( BR)GDO
V
GS(
off
)
I
DSS
| Yfs |
Ciss
Crss
I
G =--
100
μ
A
V
DS=
5V, I
D=
1
μ
A
V
DS=
5V, V
GS=
0
V
DS=
5V, V
GS=
0, f=1kHz
V
DS=
5V, V
GS=
0, f=1MHz
V
DS=
5V, V
GS=
0, f=1MHz
--0.6
1.2
4.1
0.88
V
V
μ
A
mS
pF
pF
--20
--0.2
140
C
0.4
--1.5
500
C
[Ta=25
°
C, VCC=4.5V, RL=1k
, CIN=15pF, See specified Test Circuit.]
Voltage Gain
Reduced Voltage Characteristics
Frequency Characteristics
Input Resistance
Output Resistance
Total Harmonic Distortion
Output Noise Voltage
min typ max unit
G
V
G
VV
G
Vf
Z
IN
Zo
THD
V
NO
V
IN=
10mV, f=1kHz
V
IN=
10mV, f=1kHz
V
CC=
4.5
→
1.5V
f=1kHz to 110Hz
f=1kHz
f=1kHz
VIN=30mV, f=1kHz
VIN=0 , A curve
--3.0
--1.2
1.0
dB
dB
dB
m
%
dB
25
--3.5
--1.0
700
--110
Marking
I
DSS
140 to 240
210 to 350
320 to 500
E4
E5
E6
15pF
OSC
VTVM
+33uF
1k
Vcc=4.5V
Vcc=1.5V
A
B
1k
Output Impedance
V
THD
1 : Drain
2 : Source
3 : Gate
0.1
0 to 0.1
0.3
0.2
1.0
1.6
0
1
0
0
0
1
2
3
to
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