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參數資料
| 型號： | TSA5522T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | XO, clock |
| 英文描述： | 1.4 GHz I2C-bus controlled synthesizer |
| 中文描述： | PLL FREQUENCY SYNTHESIZER, 1400 MHz, PDSO16 |
| 封裝： | 3.90 MM, PLASTIC, MS-012AC, SOT-109-1, SOP-16 |
| 文件頁數： | 9/20頁 |
| 文件大小： | 172K |
| 代理商： | TSA5522T |
1996 Jan 23
9
Philips Semiconductors
Product specification
1.4 GHz I
2
C-bus controlled synthesizer
TSA5522
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
CC1
= 4.5 to 5.5 V; V
CC2
= V
CC1
to 13.2 V; T
amb
=
20 to 85
°
C; unless otherwise specified; see note 1
SYMBOL
PARAMETER
MAX
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
SO16
SSOP20
110
120
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX
UNIT
V
CC1
V
CC2
I
CC1
I
CC2
supply voltage (+5 V)
supply voltage (+12 V)
supply current
supply current
4.5
V
CC1
22
27
5.5
13.5
30
32
V
V
mA
mA
One band switch buffer is ON;
I
source
= 20 mA
f
RF
DR
RF input frequency
divider ratio
64
256
1400
32767
MHz
MHz
15-bit frequency word
Crystal oscillator
f
xtal
crystal oscillator input
frequency
crystal oscillator input
impedance (absolute value)
R
xtal
= 25 to 300
3.2
4
4.48
MHz
Z
xtal
f
i
= 4 MHz
600
1200
Prescaler
V
i(RF)
RF input level
V
CC1
= 4.5 to 5.5 V; see Fig.4;
f
i
= 80 to 150 MHz
V
CC1
= 4.5 to 5.5 V; see Fig.4;
f
i
= 150 to 1000 MHz
V
CC1
= 4.5 to 5.5 V; see Fig.4;
f
i
= 1000 to 1400 MHz
25
3
dB
28
3
dB
26
3
dB
PNP band switch buffers outputs
|
I
LO
|
output leakage current
V
o(sat)
output saturation voltage
V
CC2
= 13.5 V; V
o
= 0 V
I
source
= 20 mA; note 1
10
-
0.2
0.5
μ
A
V
NPN open-collector outputs P4, P5, P6 and P7;
see note 2
|
I
LO
|
output leakage current
V
o(sat)
output saturation voltage
C
OL
allowed capacitive loading
on output pins
V
CC1
= 5.5 V; V
o
= 13.5 V
I
sink
= 20 mA; note 3
V
OL
= 13.5 V
0.2
10
0.5
10
μ
A
V
nF
Input ports P7, P5 and P4;
see note 2
V
IL
V
IH
LOW level input voltage
HIGH level input voltage
3
1.5
V
V
AS input (Address Selection)
I
IH(AS)
HIGH level input current
V
AS
= V
CC1
50
μ
A
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