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參數資料
| 型號： | TSDF1205RW |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 81K |
| 代理商： | TSDF1205RW |
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 5, 30-Jun-00
1 (6)
Document Number 85065
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and small signal low power amplifiers.
This transistor has superior noise figure and
associated gain performance at UHF, VHF and micro-
wave frequencies.
Features
Low power applications
Very low noise figure
High transition frequency f
T
= 12 GHz
13 579
2
1
4
3
94 9279
TSDF1205 Marking: F05
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
95 10831
2
1
4
3
94 9278
TSDF1205R Marking: 05F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
3
13 653
4
13 566
TSDF1205W Marking: WF0
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
3
4
13 566
13 654
TSDF1205RW Marking: W0F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
9
4
2
12
40
150
Unit
V
V
V
mA
mW
C
C
T
amb
≤
132 C
–65 to +150
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