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參數資料
| 型號： | TSDF2020W |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | 25-GHz NPN RF transistors very high power gain; Very low-noise; |
| 中文描述： | 25GHz射頻晶體管超高功率增益;非常低噪音; |
| 文件頁數： | 1/4頁 |
| 文件大小： | 62K |
| 代理商： | TSDF2020W |
TSDF2020W
Vishay Semiconductors
1 (4)
www.vishay.com
Document Number 85084
Rev. 3, 02–May–02
25 GHz Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For RF front–ends, low noise, and wideband
applications, such as in analogue and digital cellular
and cordless phones (DECT, PHD), in TV systems
(e.g. satellite tuners), in high frequency oscillators up
to 12 GHz, in pagers and radar detectors.
Features
Very low noise figure
Very high power gain
High transition frequency f
T
= 25 GHz
Low feedback capacitance
Emitter pins are thermal leads
1
2
4
3
16712
TSDF2020W Marking: YH4
Plastic case (SOT 343R)
1 = Emitter, 2 = Base, 3 = Emitter, 4 = Collector
Absolute Maximum Ratings
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Junction ambient
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
R
thJA
Value
10
3.5
1.5
40
200
150
Unit
V
V
V
mA
mW
°
C
°
C
K/W
T
amb
60
°
C
–65 to +150
450
on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35
μ
m Cu
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