- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385019 > TSHA620 (Vishay Intertechnology,Inc.) GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package PDF資料下載
參數(shù)資料
| 型號(hào)： | TSHA620 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| 中文描述： | 紅外發(fā)光二極管的GaAIAs在？5毫米（翻譯- 13 / 4）包裝 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 87K |
| 代理商： | TSHA620 |
TSHA620.
Vishay Telefunken
1 (6)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81021
GaAlAs Infrared Emitting Diodes in 5 mm (T–1 )
Package
Description
The TSHA620. series are high efficiency infrared emit-
ting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
70 % radiant power improvement.
In contrast to the TSHA520. series lead stand–offs are
omitted.
Features
Extra high radiant power and radiant intensity
Suitable for high pulse current operation
Standard T–1 ( 5 mm) package
Leads formed without stand–off
Angle of half intensity
=
±
12
Peak wavelength
p
= 875 nm
High reliability
Good spectral matching to Si photodetectors
94 8389
Applications
Infrared remote control and free air transmission systems with high power and long transmission distance re-
quirements in combination with PIN photodiodes or phototransistors.
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
2.5
210
100
–55...+100
–55...+100
260
350
Unit
V
mA
mA
A
mW
C
C
C
C
K/W
t
p
/T = 0.5, t
p
= 100 s
t
p
= 100 s
t
5sec, 2 mm from case
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TSHA6200 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| TSHA6201 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| TSHA6202 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| TSHA6203 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| TSHA650 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSHA6200 | 功能描述:紅外發(fā)射源 5V 22mW 875nm 12 Deg RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSHA6200_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs |
| TSHA6200_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Infrared Emitting Diode, 875 nm, GaAlAs |
| TSHA6201 | 功能描述:紅外發(fā)射源 5V 23mW 875nm 12 Deg RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSHA6202 | 功能描述:紅外發(fā)射源 5V 24mW 875nm 12 Deg RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。