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參數(shù)資料
| 型號(hào)： | TSI200B1RL |
| 英文描述： | TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE |
| 中文描述： | Set接口端子保護(hù)和二極管橋 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 160K |
| 代理商： | TSI200B1RL |
TSIxxB1
7/9
Type
I
RM
@ V
RM
V
BO
@ I
BO
I
H
I
BO
C
note1
note2
note1
note3
μ
A
max.
V
V
mA
mA
mA
pF
max.
min.
min.
max.
typ.
TSI62B1
1
5
50
62
90
150
50
400
200
TSI180B1
1
5
50
180
250
150
50
400
200
TSI200B1
1
5
50
200
290
150
50
400
200
TSI220B1
1
5
50
220
330
150
50
400
200
TSI265B1
1
5
50
265
380
150
50
400
200
Note 1 :
Measured at 50 Hz, one cycle
Note 2 :
See test cricuit
Note 3 :
VR= 0V, F = 1MHz, between pins 1 and 8.
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C)
1 - PROTECTION DEVICES PARAMETERS
Symbol
Test condition
Value
Unit
V
F
(for one diode)
I
F
= 20 mA
I
F
= 100 mA
0.9
1.1
V
V
2 - DIODE BRIDGE PARAMETERS
FUNCTIONAL HOLDING CURRENT (I
H
) TEST CIRCUIT : GO - NO GO TEST
This is a GO-NOGO Test which allows to confirm the holding current (I
H
) level in a functional
test circuit.
TEST PROCEDURE :
I
1) Adjust the current level at the I
H
value by short circuiting the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000
μ
s.
3) The D.U.T will come back off-state within a duration of 50 ms max.
R
- V
P
V
BAT
= - 48 V
Surge generator
D.U.T.
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