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參數(shù)資料
| 型號(hào)： | TSKS5412X01 |
| 英文描述： | GaAs Infrared Emitting Diode in Side View Package |
| 中文描述： | 砷化鎵紅外發(fā)光二極管在側(cè)包 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 90K |
| 代理商： | TSKS5412X01 |
TSKS5412X01
Rev. A6, 15-Oct-98
4 (7)
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
50
100
150
200
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
100
14846
P
V
R
thJA
Figure 3. Power Dissipation vs. Ambient Temperature
0
25
50
75
100
125
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
100
14847
R
thJA
I
F
Figure 4. Forward Current vs. Ambient Temperature
0
1
2
3
V
F
– Forward Voltage ( V )
4
94 7996 e
10
1
10
0
10
2
10
3
10
4
10
–1
I
F
Figure 5. Forward Current vs. Forward Voltage
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
–45 –30 –15
0
15
30
45
60
75
90
T
amb
– Ambient Temperature (
°
C )
14347
I
F
= 10 mA
V
F
Figure 6.
Relative Forward Voltage vs. Ambient Temperature
94 7913 e
10
3
10
1
I
F
– Forward Current ( mA )
10
2
10
4
10
0
0.01
0.1
1
100
10
I
e
tp/T = 0.001
tp = 100 s
Figure 7. Radiant Intensity vs. Forward Current
I
F
– Forward Current ( mA )
94 7914 e
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
–
e
Figure 8.
Radiant Power vs. Forward Current
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