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參數資料
型號: TSML1040
廠商: Vishay Intertechnology,Inc.
英文描述: Extented Power IR Emitting Diode in SMD Package
中文描述: Extented功率紅外發光二極管封裝的貼片
文件頁數: 1/10頁
文件大小: 479K
代理商: TSML1040
VISHAY
TSML1000/1020/1030/1040
Vishay Semiconductors
Document Number 81033
Rev. 6, 21-May-03
www.vishay.com
1
16852
TSML1000
TSML1030
TSML1040
TSML1020
Extented Power IR Emitting Diode in SMD Package
Description
TSML1000 series are high efficiency infrared emitting
diodes in GaAlAs on GaAs technology molded in
clear SMD package.
This technology represents best performance for radi-
ant power under pulse conditions, forward voltage
and reliability.
Features
Outstanding high radiant power
Low forward voltage
Suitable for high pulse current operation
Angle of half intensity
= ± 12°
Peak wavelength
λ
p
= 950 nm
High reliability
Matched Phototransistor series: TEMT1000
Versatile terminal configurations
Applications
For remote control
Photointerrupters
Punched tape readers
Encoder
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Basic Characteristics
T
amb
= 25 °C, unless otherwise specified
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
Unit
V
Forward Current
100
mA
Peak Forward Current
t
p
/T = 0.5, t
p
= 100
μ
s
t
p
= 100
μ
s
200
mA
Surge Forward Current
1.0
A
Power Dissipation
190
mW
Junction Temperature
100
°C
Operating Temperature Range
- 40 to + 85
°C
Storage Temperature Range
- 40 to + 100
°C
Soldering Temperature
t
5sec
<260
°C
Thermal Resistance Junction/Ambient
400
°C
Test condition
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
Min
Typ.
1.2
Max
1.5
Unit
V
I
F
= 20 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
μ
s
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 20 mA, t
p
= 20 ms
2.6
V
Temp. Coefficient of V
F
Reverse Current
- 1.85
mV/K
μ
A
pF
10
Junction Capacitance
25
Radiant Intensity
3
7
mW/sr
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