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參數資料
| 型號： | TV06B110JB |
| 廠商： | Comchip Technology Co., Ltd. |
| 英文描述： | LCD 12.1 TFT 800X600 LVDS SVGA |
| 中文描述： | 貼片瞬態電壓抑制器 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 116K |
| 代理商： | TV06B110JB |
Rating and Characteristic Curves (TV06B5V0 Thru TV06B171)
Fig. 1 - Reverse Characteristics
Fig. 2 - Pulse Derating Curve
www.comchip.com.tw
COMCHIP
0.1 1.0 10 100 1000 10000
MDS0211011A
Page 2
SMD Transient Voltage Suppressor
100
10
1.0
0.1
Non-Repetitive
Pulse Waveform
Shown in Fig. 3
T
A
=25 C
Mounted on 5mmx5mm
Copper Pads
Pulse Width, t
d
(uS)
Peak Pulse Power, P
PPM
(KW)
0 25 50 75 100 125 150 175
Ambient Temperature,T
A
( C)
Peak pulse Power (Ppp) or Current (Ipp)
Derating in Percent (%)
140
120
100
80
60
40
20
0
Fig. 4 - Typica Junction Capacitance
for Uni-Directional Devices
Junction Capacitance, Cj (pF)
Breakdown Voltage,V
BR
(Volts)
10,000
1,000
100
0
1.0 10 100 200
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
Measure at
Standard-off
Voltage, Vwm
8.3mS Single Half Sine-Wave
(JEDEC Method) Tj=Tjmax
Fig. 6 - Maxinum Non-Repetitive Peak
Forward Surge Current (Uni-
Directional Only)
Peak Forward Surge Current, I
FSM
(A)
100
50
30
10
1 10 100
Number of Cycle at 60Hz
Mounted on
5mmx5mm
Copper pads
Measure at
Zero Bias
Fig. 5 - Typica Junction Capacitance
for Bi-Directional Devices
Junction Capacitance, Cj (pF)
Breakdown Voltage,V
BR
(Volts)
10,000
1,000
100
0
1.0 10 100 200
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
Measure at
Standard-off
Voltage, Vwm
Measure at
Zero Bias
Fig. 3 - Pulse Waveform
Time, t (mS)
0 1.0 2.0 3.0 4.0
125
100
75
50
25
0
Pulse Width (td) is Defined
as the Point Where the peak
Current Decay to 50% of Ipp
Peak Value I
PPM
Half Value Ipp/2
10/1000 uS Waveform
as Defined by R.E.A.
Peak Pulse Current, I
PPM
( %)
tr =10uS
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TV06B110JB-G | 功能描述:TVS 二極管 - 瞬態電壓抑制器 TVS BI-DIRECTIONAL 600W 11V 5% RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| TV06B110JB-HF | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W, 11.0VBidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| TV06B110J-G | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W, 11.0V,Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| TV06B110J-HF | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W, 11.0V,Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| TV06B110K | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:SMD Transient Voltage Suppressor |
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