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參數資料
| 型號： | TZ425N06KOF |
| 英文描述： | TRANSIL |
| 中文描述： | 晶閘管模塊|可控硅| 600V的五（無線資源管理）| 425A我（翻譯） |
| 文件頁數： | 1/12頁 |
| 文件大小： | 395K |
| 代理商： | TZ425N06KOF |
N
Netz-Thyristor-Modul
Phase Control Thyristor
Module
Datenblatt / Data sheet
TZ425N
BIP AC / MA3-BE / 25 Mar 1992, K.Spec
A 3 /92
1/12
Seite/page
Kenndaten
Hchstzulssige Werte / Maximum rated values
Periodische Vorwrts- und Rückwrts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
TZ425N
Elektrische Eigenschaften / Electrical properties
T
vj
= -40°C... T
vj max
V
DRM
,V
RRM
1200
1600
1400
1800
V
V
1)
Vorwrts-Stospitzensperrspannung
non-repetitive peak forward off-state voltage
T
vj
= -40°C... T
vj max
V
DSM
1200
1600
1400
1800
V
V
Rückwrts-Stospitzensperrspannung
non-repetitive peak reverse voltage
T
vj
= +25°C... T
vj max
V
RSM
1300
1700
1500
1900
V
V
Durchlastrom-Grenzeffektivwert
maximum RMS on-state current
I
TRMSM
800 A
Dauergrenzstrom
average on-state current
T
C
= 85°C
T
C
= 74°C
I
TAVM
425
510
A
A
Stostrom-Grenzwert
surge current
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
TSM
14500
12500
A
A
Grenzlastintegral
I2t-value
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/μs
I2t
1051000
781000
A2s
A2s
Kritische Stromsteilheit
critical rate of rise of on-state current
(di
T
/dt)
cr
120 A/μs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6.Kennbuchstabe / 6
th
letter F
(dv
D
/dt)
cr
1000 V/μs
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
T
vj
= T
vj max
, i
T
= 1500 A
v
T
max.
1,50 V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
0,9 V
Ersatzwiderstand
slope resistance
T
vj
= T
vj max
r
T
0,3 m
Zündstrom
gate trigger current
T
vj
= 25°C, v
D
= 6 V
I
GT
max.
250 mA
Zündspannung
gate trigger voltage
T
vj
= 25°C, v
D
= 6 V
V
GT
max.
1,5 V
Nicht zündender Steuerstrom
gate non-trigger current
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
I
GD
max.
max.
10
5
mA
mA
Nicht zündende Steuerspannung
gate non-trigger voltage
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
V
GD
max.
0,2 V
Haltestrom
holding current
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
I
H
max.
300 mA
Einraststrom
latching current
T
vj
= 25°C, v
D
= 6 V, R
GK
≥
10
i
GM
= 1 A, di
G
/dt = 1 A/μs, t
g
= 20 μs
I
L
max.
1500 mA
Vorwrts- und Rückwrts-Sperrstrom
forward off-state and reverse current
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
i
D
, i
R
max.
80 mA
Zündverzug
gate controlled delay time
DIN IEC 747-6
T
vj
= 25 °C,i
GM
= 1 A, di
G
/dt = 1 A/μs
t
gd
max.
4 μs
1)
1800 auf Anfrage/ 1800V on request
prepared by: C.Drilling
date of publication:
29.08.02
approved by: J. Novotny
revision:
2
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| TZ425N08KOF | 功能描述:SCR PCT 800V 425A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TZ425N10KOF | 制造商:n/a 功能描述:Power Module |
| TZ425N11KOF | 制造商:n/a 功能描述:Power Module |
| TZ425N12KOF | 功能描述:分立半導體模塊 1200V 800A SINGLE RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| TZ425N14KOF | 功能描述:分立半導體模塊 1400V 800A SINGLE RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
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