- 您現在的位置：買賣IC網 > PDF目錄368687 > TZ740N TRANSILS PDF資料下載
參數資料
| 型號： | TZ740N |
| 英文描述： | TRANSILS |
| 中文描述： | SCR /二極管模塊 |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 364K |
| 代理商： | TZ740N |
N
Netz-Thyristor-Modul
Phase Control Thyristor
Module
Datenblatt / Data sheet
TZ740N
BIP AC / 01-10-01, C. Drilling
A 22/00
1/12
Seite/page
Kenndaten
Hchstzulssige Werte / Maximum rated values
Periodische Vorwrts- und Rückwrts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
TZ740N
Elektrische Eigenschaften / Electrical properties
T
vj
= -40°C... T
vj max
V
DRM
,V
RRM
1800
2000
2200
V
V
Vorwrts-Stospitzensperrspannung
non-repetitive peak forward off-state voltage
T
vj
= -40°C... T
vj max
V
DSM
1800
2000
2200
V
V
Rückwrts-Stospitzensperrspannung
non-repetitive peak reverse voltage
T
vj
= +25°C... T
vj max
V
RSM
1900
2100
2300
V
V
Durchlastrom-Grenzeffektivwert
maximum RMS on-state current
I
TRMSM
1500 A
Dauergrenzstrom
average on-state current
T
C
= 85°C
T
C
= 69°C
I
TAVM
740
955
A
A
Stostrom-Grenzwert
surge current
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
TSM
30.000
26.500
A
A
Grenzlastintegral
I2t-value
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/μs
I2t
4.500.000
3.500.000
A2s
A2s
Kritische Stromsteilheit
critical rate of rise of on-state current
(di
T
/dt)
cr
200 A/μs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6.Kennbuchstabe / 6
th
letter F
(dv
D
/dt)
cr
1000 V/μs
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
T
vj
= T
vj max
, i
T
= 3000 A
v
T
max.
1,65 V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
0,9 V
Ersatzwiderstand
slope resistance
T
vj
= T
vj max
r
T
0,21 m
Zündstrom
gate trigger current
T
vj
= 25°C, v
D
= 6 V
I
GT
max.
250 mA
Zündspannung
gate trigger voltage
T
vj
= 25°C, v
D
= 6 V
V
GT
max.
2,2 V
Nicht zündender Steuerstrom
gate non-trigger current
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
I
GD
max.
max.
10
5
mA
mA
Nicht zündende Steuerspannung
gate non-trigger voltage
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
V
GD
max.
0,25 V
Haltestrom
holding current
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
I
H
max.
500 mA
Einraststrom
latching current
T
vj
= 25°C, v
D
= 6 V, R
GK
≥
10
i
GM
= 1 A, di
G
/dt = 1 A/μs, t
g
= 20 μs
I
L
max.
2500 mA
Vorwrts- und Rückwrts-Sperrstrom
forward off-state and reverse current
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
i
D
, i
R
max.
150 mA
Zündverzug
gate controlled delay time
DIN IEC 747-6
T
vj
= 25 °C,i
GM
= 1 A, di
G
/dt = 1 A/μs
t
gd
max.
4 μs
prepared by: C.Drilling
date of publication:
14.03.03
approved by: J. Novotny
revision:
1
相關PDF資料 |
PDF描述 |
|---|---|
| TZ800N | TRANSILS |
| TZA3033 | SDH/SONET STM1/OC3 Transimpedance Amplifier(SDH/SONET STM1/OC3互阻抗放大器) |
| TZA3044T | 1.25 Gbits/s Gigabit Ethernet postamplifiers |
| TZA3044 | SDH/SONET STM4/OC12 and 1.25 Gbits/s Gigabit Ethernet postamplifiers |
| TZA3044B | SDH/SONET STM4/OC12 and 1.25 Gbits/s Gigabit Ethernet postamplifiers |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TZ740N18KOF | 功能描述:分立半導體模塊 2200V 1500A SINGLE RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| TZ740N20KOF | 功能描述:分立半導體模塊 2200V 1500A SINGLE RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| TZ740N22KOF | 功能描述:分立半導體模塊 2200V 1500A SINGLE RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| TZ740N22KOFB1 | 制造商:Infineon Technologies AG 功能描述: |
| TZ740N22KOG | 功能描述:SCR模塊 PHASE CONTROL THYRISTOR MODULE RoHS:否 制造商:Vishay Semiconductors 開啟狀態 RMS 電流 (It RMS):260 A 不重復通態電流:4000 A 最大轉折電流 IBO:4200 A 額定重復關閉狀態電壓 VDRM:1.6 kV 關閉狀態漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發電壓 (Vgt): 柵觸發電流 (Igt): 最大工作溫度:+ 150 C 安裝風格:Chassis 封裝 / 箱體:INT-A-PAK |
發布緊急采購，3分鐘左右您將得到回復。