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參數資料
| 型號： | TZA3013B |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 運動控制電子 |
| 英文描述： | SDH/SONET STM16/OC48 transimpedance amplifier |
| 中文描述： | SDH / SONET的STM16/OC48阻放大器 |
| 文件頁數： | 8/16頁 |
| 文件大小： | 104K |
| 代理商： | TZA3013B |
2001 Feb 26
8
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48
transimpedance amplifier
TZA3013A; TZA3013B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However it is good practice to take
normal precautions appropriate to handling MOS devices (see “Handling MOS devices”).
CHARACTERISTICS
Typical values at T
j
= 25
°
C and V
CC
= 3.3 V; minimum and maximum values are valid over the entire ambient
temperature range and supply range; all voltages are measured with respect to ground; unless otherwise specified.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
CC
V
n
supply voltage
DC voltage
pads IN and INQ
pads OUT and OUTQ
pads OUTSENSE and OUTQSENSE
pad PILOT
pad DREF
DC current
pads IN and INQ
pads OUT and OUTQ
pad PILOT
pad DREF
total power dissipation
storage temperature
junction temperature
ambient temperature
0.5
+3.8
V
0.5
0.5
0.5
0.5
0.5
+2.0
V
CC
+ 0.5
V
CC
+ 0.5
V
CC
+ 0.5
V
CC
+ 0.5
V
V
V
V
V
I
n
4.0
10
0.2
4.0
65
40
+4.0
+10
+0.2
+4.0
300
+150
150
+85
mA
mA
mA
mA
mW
°
C
°
C
°
C
P
tot
T
stg
T
j
T
amb
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
I
CC
supply voltage
supply current
3.0
3.3
26
3.6
38
V
mA
AC-coupled; R
L
= 50
;
without input signal
V
CC
= 3.3 V
P
tot
T
j
T
amb
R
tr
total power dissipation
junction temperature
ambient temperature
small-signaltransresistance
of the receiver
40
40
85.8
+25
134
+125
+85
mW
°
C
°
C
measured differentially;
AC-coupled
R
L
=
∞
R
L
= 50
C
i
= 0.5 pF
referenced to input;
f
i
= 1.8 GHz third-order
Bessel filter; note 1
3.6
1.8
1.7
7
3.5
1.9
425
10
5.0
k
k
GHz
nA
f
3dB(h)
I
n(tot)(rms)
high frequency
3 dB point
total integrated RMS noise
current over bandwidth
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