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參數(shù)資料
| 型號： | U4935B |
| 英文描述： | MOSFET, N, TO-3PB; Transistor type:MOSFET; Current, Id cont:2A; Resistance, Rds on:10R; Case style:TO-3PB; Current, Idm pulse:4A; Power, Pd:100W; Transistor polarity:N; Voltage, Vds max:1500V RoHS Compliant: Yes |
| 中文描述： | SECAM制式解碼器 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大小： | 183K |
| 代理商： | U4935B |
U4935B
TELEFUNKEN Semiconductors
Rev. A1, 28-Jan-97
Preliminary Information
4 (16)
Unit
Max.
1.36
Typ.
1.24
Min.
1.10
Symbol
V
B–Y
/V
B–
Y
V
LIN
Test Conditions / Pins
Parameters
Ratio of –(B–Y)/–(R–Y) output
signal amplitude
Linearity
(see notes 1 and 3, page 5)
Pin 10
2.6
2.9
3.2
Sandcastle pulse
(see figures 16 and 17)
Vertical blanking detection level
Horizontal blanking detection level
Burst-gate detection level
Reference/ Identification
Reference frequency
Pin 15
Pin 15
Pin 15
V
VB
V
HB
V
BG
1.0
1.75
3.5
1.25
2.0
3.85
1.4
2.25
4.2
V
V
V
During vertical blanking
(see figure 4, 300 mVpp)
Pin 1
f
ref
4.4336
MHz
System switches detection level
(at SECAM)
System switches detection level
(at no SECAM)
Sink current (at SECAM)
Pin 5 voltage (at SECAM)
Sensitivity of identification and
killer
V
ext1
= variable
(see figure 6),
V
ext1
= variable
(see figure 6),
(see note 5, page 5), Pin 1
(see note 1, page 5), Pin 5
Attenuate the amplitude
(see notes 1 and 6, page 5)
Pin 1
V
TH1
2.9
3.3
V
Pin 1
V
TH2
1.5
2.0
V
125
2.4
–46
180
3.1
–38
235
3.6
–32
A
V
dB
V
5S
I/K
Pin 5
Unspecified characteristics
(only for reference but not guaranteed limiting values)
Input dynamic range
(peak-to-peak value)
Chrominance input voltage
(peak-to-peak value)
Pole frequency of the de-emphasis
LPF
Ratio of the pole and zero
frequency
–(R–Y), –(B–Y) output impedance
(at SECAM)
–(R–Y), –(B–Y) output impedance
(at no SECAM)
Reference voltage amplitude
(peak-to-peak value)
Rising edge of SECAM burst-gate
pulse (internal generated)
Falling edge of SECAM burst-gate
pulse
Pin 16
V
DR
1.0
1.4
V
(see note 7, page 5), Pin 16
V
CL
167
300
mV
f
p
85
kHz
f
p
/f
o
3
Pins 9 and 10
Z
o1
200
600
Pins 9 and 10
Z
o2
1
M
(see note 8, page 5), Pin 1
V
ref
0.2
0.57
V
(see note 9, page 5)
T
r
4.5
s
(see note 10, page 5)
T
f
0.2
s
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