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參數資料
| 型號： | U630H64BDK25 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎） |
| 文件頁數： | 3/14頁 |
| 文件大小： | 143K |
| 代理商： | U630H64BDK25 |
3
November 01, 2001
U630H64
DC Characteristics
Symbol
Conditions
C-Type
K-Type
Unit
Min.
Max.
Min.
Max.
Operating Supply Current
b
I
CC1
V
CC
V
IL
V
IH
t
c
t
c
t
c
= 5.5 V
= 0.8 V
= 2.2 V
= 25 ns
= 35 ns
= 45 ns
90
80
75
95
85
80
mA
mA
mA
Average Supply Current during
STORE
c
I
CC2
V
CC
E
W
V
IL
V
IH
= 5.5 V
≥
V
CC
-0.2 V
≥
V
CC
-0.2 V
≤
0.2 V
≥
V
CC
-0.2 V
6
7
mA
Standby Supply Current
d
(Cycling TTL Input Levels)
I
CC(SB)1
V
CC
E
t
c
t
c
t
c
= 5.5 V
≥
V
IH
= 25 ns
= 35 ns
= 45 ns
30
23
20
34
27
23
mA
mA
mA
Average Supply Current
at t
cR
= 200 ns
b
(Cycling CMOS Input Levels)
I
CC3
V
CC
W
V
IL
V
IH
= 5.5 V
≥
V
CC
-0.2 V
≤
0.2 V
≥
V
CC
-0.2 V
15
15
mA
Standby Supply Current
d
(Stable CMOS Input Levels)
I
CC(SB)
V
CC
E
V
IL
V
IH
= 5.5 V
≥
V
CC
-0.2 V
≤
0.2 V
≥
V
CC
-0.2 V
1
1
mA
Recommended
Operating Conditions
Symbol
Conditions
Min.
Max.
Unit
Power Supply Voltage
V
CC
4.5
5.5
V
Input Low Voltage
V
IL
-2 V at Pulse Width
10 ns permitted
-0.3
0.8
V
Input High Voltage
V
IH
2.2
V
CC
+0.3
V
b:
I
CC1
and I
CC3
are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded.
The current I
CC1
is measured for WRITE/READ - ratio of 1/2.
c: I
CC2
is the average current required for the duration of the STORE cycle (STORE Cycle Time).
d:
Bringing E
≥
V
IH
will not produce standby current levels until any nonvolatile cycle in progress has timed out. See MODE SELECTION
table. The current I
CC(SB)1
is measured for WRITE/READ - ratio of 1/2.
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相關代理商/技術參數 |
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| U630H64BDK35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64BDK45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64BSC25 | 制造商:Cypress Semiconductor 功能描述: |
| U630H64BSC35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64BSC45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
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