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參數資料
| 型號： | U632H64D1K25 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎） |
| 文件頁數： | 10/14頁 |
| 文件大小： | 155K |
| 代理商： | U632H64D1K25 |
10
November 01, 2001
U632H64
Test Configuration for Functional Check
x:
y:
In measurement of t
dis
-times and t
en
-times the capacitance is 5 pF.
Between V
CC
and V
SS
must be connected a high frequency bypass capacitor 0.1
μ
F to avoid disturbances.
Capacitance
e
Conditions
Symbol
Min.
Max.
Unit
Input Capacitance
V
CC
V
I
f
T
a
= 5.0 V
= V
SS
= 1MHz
= 25
°
C
C
I
8
pF
Output Capacitance
C
O
7
pF
All Pins not under test must be connected with ground by capacitors.
IC Code Numbers
Example
25 = 25 ns
35 = 35 ns (on special request)
45 = 45 ns (on special request)
Operating Temperature Range
C =
0 to 70
°
C
K = -40 to 85
°
C
z: ESD protection > 2000 V under development
B
ESD Class
blank > 2000 V
z
B > 1000 V
Package
D
U632H64
35
C
D1 = PDIP (600 mil)
S = SOP (330 mil)
D = PDIP (300 mil)
Type
Access Time
V
CCXY
V
CAP
V
IH
V
IL
V
SS
480
255
30 pF
x
V
O
S
m
I
r
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
HSB
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
HSB
E
W
G
5 V
The date of manufacture is given by the last 4 digits of the mark, the first 2 digits indicating the year, and the
last 2 digits the calendar week.
相關PDF資料 |
PDF描述 |
|---|---|
| U632H64D1K35 | HIGH PERFORMANCE CMOS DUAL OP-AMPS |
| U632H64D1K45 | NVRAM (EEPROM Based) |
| U632H64DC25 | NVRAM (EEPROM Based) |
| U632H64DC35 | NVRAM (EEPROM Based) |
| U632H64DC45 | NVRAM (EEPROM Based) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| U632H64D1K35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U632H64D1K45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U632H64DC25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U632H64DC35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U632H64DC45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
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