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參數資料
| 型號： | U635H64BSC25 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎） |
| 文件頁數： | 9/13頁 |
| 文件大小： | 132K |
| 代理商： | U635H64BSC25 |
9
November 01, 2001
U635H16
u:
W must be HIGH when E is LOW during the address sequence in order to initiate a nonvolatile cycle. G may be either HIGH or LOW
throughout. Addresses 1 through 6 are found in the mode selection table. Address 6 determines whether the U635H16 performs a STORE
or RECALL.
E must be used to clock in the address sequence for the software controlled STORE and RECALL cycles.
v:
Ai
E
DQi
Output
t
cR
t
w(E)SR
(32)
ADDRESS 1
VALID
t
dis(E)SR
(28)
Software Controlled STORE/RECALL Cycle
s, t, u, v
(E = HIGH after STORE initiation)
ADDRESS 6
(27)
(27)
t
h(A)SR
(33)
t
su(A)SR
(31)
Ai
E
DQi
Output
t
cR
t
w(E)SR
(32)
ADDRESS 1
VALID
ADDRESS 6
t
d(E)S
(29)
(30)
(27)
t
h(A)SR
(33)
t
su(A)SR
(31)
t
dis(E)SR
(28)
t
h(A)SR
(33)
t
su(A)SR
(31)
t
w(E)SR
(32)
t
d(E)R
t
h(A)SR
(33)
t
su(A)SR
(31)
(5)
t
dis(E)
Software Controlled STORE/RECALL Cycle
s, t, u, v
(E = LOW after STORE initiation)
VALID
High Impedance
High Impedance
t
d(E)S
(29)
(30)
VALID
t
d(E)R
t
cR
相關PDF資料 |
PDF描述 |
|---|---|
| U635H64D1K35G1 | PowerStore 8K x 8 nvSRAM |
| U635H64D1K45G1 | PowerStore 8K x 8 nvSRAM |
| U635H64S2C25 | PowerStore 8K x 8 nvSRAM |
| U635H64S2C25G1 | PowerStore 8K x 8 nvSRAM |
| U635H64S2C35 | PowerStore 8K x 8 nvSRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| U635H64BSC25G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
| U635H64BSC35 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
| U635H64BSC35G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
| U635H64BSC45 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
| U635H64BSC45G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
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