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參數(shù)資料
| 型號(hào)： | U635H64S2C45G1 |
| 英文描述： | PowerStore 8K x 8 nvSRAM |
| 中文描述： | PowerStore 8K的× 8非易失 |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大?。?/td> | 149K |
| 代理商： | U635H64S2C45G1 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)當(dāng)前第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
U635H64
9
March 31, 2006
STK Control #ML0052
Rev 1.0
u:
W must be HIGH when E is LOW during the address sequence in order to initiate a nonvolatile cycle. G may be either HIGH or LOW
throughout. Addresses 1 through 6 are found in the mode selection table. Address 6 determines whether the U635H64 performs a STORE
or RECALL.
E must be used to clock in the address sequence for the software controlled STORE and RECALL cycles.
v:
Ai
E
DQi
Output
t
cR
t
w(E)SR
(32)
High Impedance
ADDRESS 1
VALID
VALID
Software Controlled STORE/RECALL Cycle
s, t, u, v
(E = HIGH after STORE initiation)
ADDRESS 6
t
h(A)SR
(27)
(27)
t
h(A)SR
(33)
t
su(A)SR
(31)
Ai
E
DQi
Output
t
cR
t
w(E)SR
(32)
High Impedance
ADDRESS 1
VALID
VALID
ADDRESS 6
t
d(E)S
(29)
(30)
(27)
t
h(A)SR
(33)
t
su(A)SR
(31)
t
dis(E)SR
(28)
t
h(A)SR
(33)
t
su(A)SR
(31)
t
w(E)SR
(32)
t
d(E)S
(29)
(33)
t
su(A)SR
(31)
(5)
t
dis(E)
t
d(E)R
Software Controlled STORE/RECALL Cycle
s, t, u, v
(
E = LOW after STORE initiation)
(30)
t
dis(E)SR
(28)
t
d(E)R
t
cR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| U635H64S2K25 | PowerStore 8K x 8 nvSRAM |
| U635H64S2K25G1 | PowerStore 8K x 8 nvSRAM |
| U635H64S2K35 | PowerStore 8K x 8 nvSRAM |
| U635H64S2K35G1 | PowerStore 8K x 8 nvSRAM |
| U635H64S2K45 | PowerStore 8K x 8 nvSRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U635H64S2K25 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
| U635H64S2K25G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
| U635H64S2K35 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
| U635H64S2K35G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
| U635H64S2K45 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
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