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參數資料
| 型號： | UC3610DWTR |
| 英文描述： | Power management for multimedia application processors |
| 中文描述： | 橋/環二極管陣列|蘇 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 104K |
| 代理商： | UC3610DWTR |
SLUS339A
–
JUNE 1993
–
REVISED MAY 2001
2
www.ti.com
N OR J PACKAGE
TOP VIEW
DW PACKAGE
TOP VIEW
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Peak inverse voltage (per diode)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak forward current
UC1611
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UC2610
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UC3611
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power dissipation at T
A
= 70
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (soldering, 10 seconds)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50 V
1 A
1 A
3 A
1 W
–
65
°
C to 150
°
C
300
°
C
Stresses beyond those listed under
“
absolute maximum ratings
”
may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under
“
recommended operating conditions
”
is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Consult packaging section of databook for thermal limitations and considerations of package.
electrical characteristics, all specifications apply to each individual diode, T
J
= 25
°
C, T
A
= T
J
,
(except as noted)
PARAMETER
TEST CONDITIONS
MIN
0.35
TYP
0.5
MAX
UNITS
V
Forward voltage drop
IF = 100 mA
IF = 1 A
VR = 40 V
VR = 40 V,
0.5 A forward to 0.5 A reverse
0.7
0.8
1.0
1.3
V
Leakage c rrent
Leakage current
0.01
0.1
mA
TJ = 100
°
C
0.1
1.0
mA
Reverse recovery
15
ns
Forward recovery
1 A forward to 1.1 V recovery
30
ns
Junction capacitance
NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes.
VR = 5 V
70
pF
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