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參數(shù)資料
型號(hào): UC3610N
英文描述: Power management for multimedia application processors
中文描述: 集成電路雙肖特基二極管橋
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 104K
代理商: UC3610N
SLUS339A
JUNE 1993
REVISED MAY 2001
2
www.ti.com
N OR J PACKAGE
TOP VIEW
DW PACKAGE
TOP VIEW
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Peak inverse voltage (per diode)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak forward current
UC1611
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UC2610
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UC3611
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power dissipation at T
A
= 70
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (soldering, 10 seconds)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50 V
1 A
1 A
3 A
1 W
65
°
C to 150
°
C
300
°
C
Stresses beyond those listed under
absolute maximum ratings
may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under
recommended operating conditions
is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Consult packaging section of databook for thermal limitations and considerations of package.
electrical characteristics, all specifications apply to each individual diode, T
J
= 25
°
C, T
A
= T
J
,
(except as noted)
PARAMETER
TEST CONDITIONS
MIN
0.35
TYP
0.5
MAX
UNITS
V
Forward voltage drop
IF = 100 mA
IF = 1 A
VR = 40 V
VR = 40 V,
0.5 A forward to 0.5 A reverse
0.7
0.8
1.0
1.3
V
Leakage c rrent
Leakage current
0.01
0.1
mA
TJ = 100
°
C
0.1
1.0
mA
Reverse recovery
15
ns
Forward recovery
1 A forward to 1.1 V recovery
30
ns
Junction capacitance
NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes.
VR = 5 V
70
pF
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