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參數(shù)資料
| 型號： | UGB18BCT-HE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 9 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 142K |
| 代理商： | UGB18BCT-HE3/45 |
UG(F,B)18ACT thru UG(F,B)18DCT
Vishay General Semiconductor
Document Number: 88759
Revision: 09-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES
Glass passivated chip junction
Ultrafast recovery time
Low switching losses, high efficiency
Low forward voltage drop
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
18 A
50 V to 200 V
175 A
20 ns
0.95 V
150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
UG18xCT Series
ITO-220AB
UGF18xCT Series
UGB18xCT Series
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
TO-263AB
123
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG18ACT
UG18BCT
UG18CCT
UG18DCT
UNIT
Maximum repetitive peak reverse voltage
V
RRM
V
RMS
V
DC
I
F(AV)
50
100
150
200
V
Maximum RMS voltage
35
70
105
140
V
Maximum DC blocking voltage
50
100
150
200
V
Maximum average forward rectified current at T
C
= 105 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
18
A
I
FSM
175
A
Operating junction and storage temperature range
T
J
, T
STG
- 65 to + 150
°C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UGB18CCT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:ULTRAFAST EFFICIENT PLASTIC RECTIFIER |
| UGB18CCT/81 | 功能描述:整流器 150 Volt 18 Amp 20ns Dual 175 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| UGB18CCT-E3/81 | 功能描述:整流器 150 Volt 18 Amp 20ns Dual 175 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| UGB18CCTHE3/45 | 功能描述:整流器 18 Amp 150 Volt 20ns Dual 175 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| UGB18CCTHE3/81 | 功能描述:整流器 150 Volt 18 Amp 20ns Dual 175 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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