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參數(shù)資料
| 型號： | UL631H256S2C35 |
| 英文描述： | SimtekLow Voltage SoftStore 32K x 8 nvSRAM |
| 中文描述： | SimtekLow電壓SoftStore 32K的× 8非易失 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 190K |
| 代理商： | UL631H256S2C35 |
UL631H256
2
March 31, 2006
STK Control #ML0057
Rev 1.0
Block Diagram
Operating Mode
E
W
G
DQ0 - DQ7
Standby/not selected
H
*
*
High-Z
Internal Read
L
H
H
High-Z
Read
L
H
L
Data Outputs Low-Z
Write
L
L
*
Data Inputs High-Z
Truth Table for SRAM Operations
a:
Stresses greater than those listed under Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Absolute Maximum Ratings
a
Symbol
Min.
Max.
Unit
Power Supply Voltage
V
CC
-0.5
4.6
V
Input Voltage
V
I
-0.3
V
CC
+0.5
V
Output Voltage
V
O
-0.3
V
CC
+0.5
V
Power Dissipation
P
D
1
W
Operating Temperature
C-Type
K-Type
T
a
0
-40
70
85
°C
°
C
Storage Temperature
T
stg
-65
150
°
C
Characteristics
All voltages are referenced to V
SS
= 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of
≤
5 ns, measured between 10 % and 90 % of V
I
, as well as
input levels of V
IL
= 0 V and V
IH
= 3 V. The timing reference level of all input and output signals is 1.5 V,
with the exception of the t
dis
-times and t
en
-times, in which cases transition is measured
±
200 mV from steady-state voltage.
*
H or L
EEPROM Array
512 x (64 x 8)
RECALL
A0 - A13
Store/
Recall
Control
R
V
CC
V
SS
G
E
W
Software
Detect
V
CC
A5
A6
A7
A8
A9
A11
A12
A13
A14
STORE
SRAM
Array
512 Rows x
64 x 8 Columns
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Column I/O
Column Decoder
A0 A1
A2 A3 A4A10
I
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UL631H256S2C35G1 | SimtekLow Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2C45 | SimtekLow Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2K35 | SimtekLow Voltage SoftStore 32K x 8 nvSRAM |
| UMA1005 | Dual low-power frequency synthesizer |
| UMA1005T | Dual low-power frequency synthesizer |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UL631H256S2C35G1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2C45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2C45G1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2K35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2K35G1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
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