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參數資料
| 型號： | UMA4N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:44-SOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL |
| 中文描述： | 通用（雙數字晶體管） |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 65K |
| 代理商： | UMA4N |
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N /
Transistors
FMA4A / IMB4A / IMB8A
General purpose (dual digital transistors)
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N /
FMA4A / IMB4A / IMB8A
!
Features
1) Two DTA114T chips in a EMT or UMT or SMT package.
!
Equivalent circuit
EMA4 / UMA4N
R
1
R
1
(1)
(2)
(3)
(4)
(5)
EMB4 / UMB4N
(3)
(2)
(1)
(4)
(5)
(6)
R
1
R
1
UMB8N
(3)
(2)
(1)
(4) (5)
(6)
R
1
R
1
FMA4A
(3)
(2)
(1)
(4)
(5)
R
1
R
1
IMB4A
(4)
(5)
(6)
(3)
(2)
(1)
R
1
R
1
IMB8A
(4)
(5)
(6)
(3) (2)
(1)
R
1
R
1
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
50
50
5
100
300(TOTAL)
150
55
~
+
150
150(TOTAL)
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N
FMA4A / IMB4A / IMB8A
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Min.
50
50
5
100
7
Typ.
250
250
10
Max.
0.5
0.5
0.3
600
13
Unit
V
V
V
μ
A
μ
A
V
MHz
k
Conditions
Transition frequency
Input resistance
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
50V
V
EB
=
4V
I
C
/I
B
=
10mA/
1mA
V
CE
=
5V, I
C
=
1mA
V
CE
=
10V, I
E
=
5mA, f
=
100MHz
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
!
Package, marking, and packaging specifications
Type
Package
Marking
Code
UMA4N
UMT5
A4
TR
3000
EMA4
EMT5
A4
T2R
8000
EMB4
EMT6
B4
T2R
8000
UMB8N
UMT6
B8
TR
3000
FMA4A
SMT5
A4
T148
3000
IMB4A
SMT6
B4
T110
3000
IMB8A
SMT6
B8
T108
3000
UMB4N
UMT6
B4
TN
3000
Basic ordering unit (pieces)
相關PDF資料 |
PDF描述 |
|---|---|
| UMB4N | General purpose (dual digital transistors) |
| UMB8N | CONNECTOR ACCESSORY |
| UMA5N | SEE A1142LUA-T |
| UMA7N | Emitter common (dual digital transistors) |
| UMA8N | Emitter common (dual digital transistors) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UMA4NT1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V Dual NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMA4NT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual Common Emitter Bias Resistor Transistors |
| UMA4NT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Common Emitter Bias Resistor Transistors |
| UMA4NT1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V Dual NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMA4NT2 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V Dual NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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