
UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
NPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / MMST2222A / PN2222A
!
Features
1) BV
CEO
>
40V (I
C
=
10mA)
2) Complements the UMT2907A / SST2907A
/ MMST2907A / PN2907A.
!
Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT2222A
UMT3
R1P
T106
3000
SST2222A
SST3
R1P
T116
3000
MMST2222A
SMT3
R1P
T146
3000
PN2222A
TO-92
T93
3000
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
75
40
6
0.6
0.35
0.625
150
55
~ +
150
Unit
V
V
V
A
W
W
°
C
°
C
W
P
C
0.2
SST2222A
PN2222A
UMT2222A,SST2222A,
MMST2222A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
Junction temperature
Storage temperature
When mounted on a 7 x 5 x 0.6 mm ceramic board
!
External dimensions
(Units : mm)
ROHM : UMT3
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
UMT2222A
SST2222A
MMST2222A
PN2222A
0
~
0.1
0.2Min.
2
±
0
1
0.95
0.45
±
0.1
0.15
0.4
2.9
±
0.2
1.9
±
0.2
0.950.95
+
0
0
0.1
+
0.2
+
0.1
0.06
+
0.1
0.05
(2)
(1)
(3)
0
~
0.1
2
±
0
1
0
~
0
1.1
0.8
±
0.1
0.15
0.4
2.9
±
0.2
1.9
±
0.2
0.950.95
+
0
0
0.1
+
0.2
+
0.1
+
0.1
0.05
(2)
(1)
(3)
0
~
0.1
(2)
(1)
(3)
0
~
0
2
±
0
1
±
0
0.9
±
0.1
0.2
0.7
±
0.1
0.15
±
0.05
0.3
2.0
±
0.2
1.3
±
0.1
0.65 0.65
+
0.1
0
4
±
0
(
2
4.8
±
0.2
3.7
±
0.2
5
0.45
2.3
0.5
±
0.1
+
0.05
2.5
+
0.3
0.1
(1)
(2)
(3)
All terminals have same dimensions
All terminals have same dimensions
All terminals have same dimensions
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min.
75
40
6
Typ.
Max.
100
100
0.3
Unit
V
V
V
nA
nA
Conditions
I
C
=
10
μ
A
I
C
=
10mA
I
E
=
10
μ
A
V
CB
=
60V
V
EB
=
3V
I
C
/I
B
=
150mA/15mA
2
V
BE(sat)
0.6
1.2
V
1
I
C
/I
B
=
500mA/50mA
I
C
/I
B
=
150mA/15mA
V
CE(sat)
V
I
C
/I
B
=
500mA/50mA
V
CE
=
10V , I
C
=
0.1mA
V
CE
=
10V , I
C
=
1
mA
V
CE
=
10V , I
C
=
10mA
V
CE
=
1V , I
C
=
150mA
V
CE
=
10V , I
C
=
150mA
V
CE
=
10V , I
C
=
500mA
V
CE
=
20V , I
C
=
20mA, f
=
100MHz
V
CB
=
10V , f
=
100kHz
V
EB
=
0.5V , f
=
100kHz
V
CC
=
30V , V
BE(OFF)
=
0.5V , I
C
=
150mA , I
B1
=
15mA
V
CC
=
30V , V
BE(OFF)
=
0.5V , I
C
=
150mA , I
B1
=
15mA
V
CC
=
30V , I
C
=
150mA , I
B1
=
I
B2
=
15mA
V
CC
=
30V , I
C
=
150mA , I
B1
=
I
B2
=
15mA
40
300
8
25
10
25
225
60
50
100
h
FE
75
50
35
300
f
T
Cob
Cib
td
tr
tstg
tf
MHz
pF
pF
ns
ns
ns
ns
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time